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High Silicon Self-Interstitial Diffusivity as Revealed by Lithium Ion Drifting

  • W. B. Knowlton (a1) (a2), J. T. Walton (a1), Y. K. Wong (a1), I. A. Mason (a1) and E. E. Haller (a1) (a2)...

Abstract

We report on the use of lithium ion (Li+) drifting1 as a sensitive means to study Si self-interstitial (SiI) diffusion.2 Li+ properties in silicon are well known from extensive ion drift studies and Li+ interactions with dopants and point defects.3 We have used this low temperature (∼100°C) technique in combination with Si1 injection from oxides to delineate, identify and eliminate D defects4 in certain p-type floating zone (FZ) Si single crystals.5 Our results suggest Si1 diffusion occurs to a depth of at least 10 mm into the bulk during phosphorus (P) diffusion with oxidation (i.e., POCI3 process) at 950°C for 100 min. Process modeling of this lower bound SiI diffusion using SUPREM-IV9 results in a Sii diffusivity of 3.5×10−6 cm2/s at 950°C.

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1. Pell, E.M., J. Appl. Phys. 31, 291 (1960).
2. Knowlton, W.B., Walton, J.T., Lee, J.S., Wong, Y.K., Haller, E.E., Ammon, W.v. and Zulehner, W., in Proc. 18th Intl. Conf. on Defects in Semicon./1995, edited by Suezawa, M. and Katayama-Yoshida, H., (Trans Tech Publications Ltd, 201, Switzerland 1995), p. 1761.
3. Reiss, H., Fuller, C.S. and Morin, F.J., BSTJ XXXV, 535 (1956).
4. Roksnoer, P.J. and van den Boom, M.M.B., J. Cryst. Growth 53, 563 (1981).
5. Walton, J.T., Wong, Y.K., Derhocobian, N. and Haller, E.E., Appl. Phys. Lett. 63, 343 (1993).
6. Walton, J.T., Wong, Y.K., Derhocobian, N. and Haller, E.E., IEEE Trans. NS 41, 1031 (1994).
7. Knowlton, W.B., Walton, J.T., Lee, J.S., Lewak, D., Wong, Y.K. and Haller, E.E., in Process Physics and Modeling in Semiconductor Technology, edited by Srinivasan, G. R., Murthy, C. S. and Dunham, S. T., (Electrochemical Society, Inc., 96–4, Pennington, NJ 1996), p. 324.
8. Walton, J.T., Lee, J.S., Lewak, D., Wong, Y.K., Cummings, A.C., Mewaldt, R.A., Wiedenbeck, M.E., Knowlton, W.B. and Haller, E.E., in High Purity Silicon IV, edited by Claeys, C. L., Rai-Choudhury, P., Stallhofer, P. and Maurtis, J. E., (Electrochemical Society, Inc., 96–13, Pennington, NJ 1996), p. 407.
9. SUPREM-IV, Stanford University, Office of Technology Licensing Stanford CA.
10. Zulehner, W., in Semiconductor Silicon, edited by Harbeke, G. and Schulz, M. J., (Springer-Verlag, 13, Berlin 1989), p. 127.
11. Fuller, C.S. and Ditzenberger, J.A., Phys. Rev. 91, 193 (1953).
12. Severiens, J.C. and Fuller, C.S., Phys. Rev. 92, 1322 (1953).
13. Fuller, C.S., Phys. Rev. 86, 136 (1952).
14. Pell, E.M., J. Appl. Phys. 32, 1048 (1961).
15. Walton, J.T., Sommer, H.A., Greiner, D.E. and Bieser, F.S., IEEE Trans. NS NS–25, 391 (1978).
16. Sher, A.H. and Coleman, J.A., IEEE Trans. NS NS–17, 125 (1970).
17. Ourmazd, A. and Schröter, W., Appl. Phys. Lett. 45, 781 (1984).
18. Whoriskey, P.J., J. Appl. Phys. 29, 867 (1958).
19. Tan, T.Y. and Gösele, U., Appl. Phys. A 37, 1 (1985).
20. Bronner, G.B. and Plummer, J.D., J. Appl. Phys. 61, 5286 (1987).
21. Morehead, F.F., in Defect Electronic Materials, edited by Stavola, M., Pearton, S. J. and Davies, G., (MRS Proc. 104, Pittsburgh, PA 1987), p. 99.
22. Boit, C., Lau, F. and Sittig, R., Appl. Phys. A 50, 197 (1990).
23. Zimmermann, H. and Ryssel, H., Appl. Phys. A 55, 121 (1992).
24. Bracht, H., Stolwijk, N.A. and Mehrer, H., Phys. Rev. B 52, 16542 (1995).

High Silicon Self-Interstitial Diffusivity as Revealed by Lithium Ion Drifting

  • W. B. Knowlton (a1) (a2), J. T. Walton (a1), Y. K. Wong (a1), I. A. Mason (a1) and E. E. Haller (a1) (a2)...

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