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High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

Published online by Cambridge University Press:  28 February 2011

D. K. Sadana ,
J. M. Zavada ,
H. A. Jenkinson  and
T. Sands
D. K. Sadana
Affiliation:
Philips Research Laboratories, Signetics Corporation, Sunnyvale, CA 94086
J. M. Zavada
Affiliation:
Army Research Office, Research Triangle Park NC 27709
H. A. Jenkinson
Affiliation:
U. S. Army Armament R & D Center, Dover, NJ 07801
T. Sands
Affiliation:
Materials & Molecular Research Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
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Abstract

High resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 377
Copyright
Copyright © Materials Research Society 1985

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