Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-17T23:19:08.588Z Has data issue: false hasContentIssue false
  • English
  • Français

High Resolution Tem Study of Diamond Formation on Silicon and Molybdenum Field Emitter Surfaces

Published online by Cambridge University Press:  21 February 2011

A. F. Myers ,
J. Liu ,
W. B. Choi ,
G. J. Wojak  and
J. J. Hren
A. F. Myers
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
J. Liu
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
W. B. Choi
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
G. J. Wojak
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
J. J. Hren
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
Get access

Abstract

Diamond is an attractive material for coating microfabricated metal and semiconductor field emitters, since it enhances the stability and emission characteristics of the emitter. In the present study, polycrystalline diamond thin films were grown on silicon and molybdenum field emitters by microwave plasma chemical vapor deposition, using the bias-enhanced nucleation technique. High resolution transmission electron microscopy (TEM) was used to analyze the morphology of the diamond film and the structure of the diamond/emitter interface. Electron diffraction patterns and high resolution images indicate the presence of a polycrystalline diamond film, as well as a polycrystalline SiC layer between the diamond film and the Si emitter. A carbide interlayer was also found to exist between the diamond and the Mo emitter surface. Parallel electron energy loss spectroscopy confirms the TEM identification of a polycrystalline diamond film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 449
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Himpsel, F. J., Knapp, J. A., Van Vechten, J. A., and Eastman, D. E., Phys. Rev. B 20, (1979) 624.Google Scholar
2 Liu, J., Zhirnov, V. V., Myers, A. F., Wojak, G. J., Choi, W. B., Hren, J. J., Wolter, S. D., McClure, M. T., and Glass, J. T., 7th International Vacuum Microelectronics Conference, July 1994, Grenoble, France.Google Scholar
3 Utsumi, T., IEEE Trans. Elec. Dev. 38,2276 (1991).Google Scholar
4 Givargizov, E. I., in Current Topics in Materials Science. Vol. 1 edited by Kaldis, E., (North Holland Publishers, Amsterdam, 1978) 79.Google Scholar
5 Stoner, B. R., Williams, B. E., Wolter, S. D., Nishimura, K., and Glass, J. T., J. Mater. Res. 7, 257 (1992).Google Scholar
6 Ma, G.-H.M., Microstructural Characterization of Diamond Films. Ph. D. Dissertation, (North Carolina State University, 1991).Google Scholar
7 Berger, S. D., McKenzie, D. R., and Martin, P. J., Phil. Mag. Lett. 57, 285 (1988).Google Scholar
8 Cuomo, J. J., Doyle, J. P., Bruley, J., and Liu, J. C., J. Vac. Sei. Technol. A 9, 2210 (1991).Google Scholar