Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-24T09:58:54.633Z Has data issue: false hasContentIssue false

High Resolution Resists for Next Generation Lithography: The Nanocomposite Approach

Published online by Cambridge University Press:  17 March 2011

Kenneth E. Gonsalves
Affiliation:
Polymer Program at the Institute of Materials Science &, Department of Chemistry University of Connecticut, Storrs, CT 06268, USA, gonsalve@uconnvm.uconn.edu
Hengpeng Wu
Affiliation:
Polymer Program at the Institute of Materials Science &, Department of Chemistry University of Connecticut, Storrs, CT 06268, USA, gonsalve@uconnvm.uconn.edu
Yongqi Hu
Affiliation:
Polymer Program at the Institute of Materials Science &, Department of Chemistry University of Connecticut, Storrs, CT 06268, USA, gonsalve@uconnvm.uconn.edu
Lhadi Merhari
Affiliation:
CERAMEC R&D, F-87000, Limoges, France, ceramec@wanadoo.fr
Get access

Abstract

The SIA roadmap predicts mass production of sub-100 nm resolution circuits by 2006. This not only imposes major constraints on next generation lithographic tools but also requires that new resists capable of accommodating such a high resolution be synthesized and developed concurrently. Except for ion beam lithography, DUV, X-ray, and in particular electron beam lithography suffer significantly from proximity effects, leading to severe degradation of resolution in classical resists. We report a new class of resists based on organic/inorganic nanocomposites having a structure that reduces the proximity effects. Synthetic routes are described for a ZEP520®nano-SiO2 resist where 47nm wide lines have been written with a 40 nm diameter, 20 keV electron beam at no sensitivity cost. Other resist systems based on polyhedral oligosilsesquioxane copolymerized with MMA, TBMA, MMA and a proprietary PAG are also presented. These nanocomposite resists suitable for DUV and electron beam lithography show enhancement in both contrast and RIE resistance in oxygen. Tentative mechanisms responsible for proximity effect reduction are also discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Harriott, L. R., Materials Today 2, 9 (1999).Google Scholar
2. Gonsalves, K.E., Wang, J., and Wu, H., J. Vac. Sci. Technol. B 18 (1), 325 (2000).Google Scholar
3. Gonsalves, K.E., Merhari, L., Wu, H., and Hu, Y., Advanced Materials, 2001 (in press); and references therein.Google Scholar
4. Materials Issues and Modeling for Device Nanofabrication, edited by Merhari, L., Wille, L.T., Gonsalves, K.E., Gyure, M.F., Matsui, S., and Whitman, L.J., (Mater. Res. Soc. Proc. 584, Warrendale, PA, 2000).Google Scholar
5. Dobisz, E.A., Marrian, C.R.K., Salvino, R.E., Ancona, M.A., Perkins, F.K. and Turner, N.H., J. Vac. Sci. Technol. B 11, 2733 (1993).Google Scholar
6. Hutchinson, J.M., Wallraff, G.M., Hinsberg, W.D., Opitz, J., and Oldham, W.G., SPIE 2438, 486 (1995).Google Scholar
7. Lee, A., and Lichtenhan, J.D., Macromolecules 31, 4970 (1998).Google Scholar
8. Wallraff, G.M., Hinsberg, W.D., Chem. Rev. 99, 1801(1999).Google Scholar
9. Wu, H., and Gonsalves, K.E., Advanced Materials, 2000 (in press).Google Scholar
10. Ishii, T., Nozawa, H. and Tamamura, T., J. Vac. Sci. Technol. B 15, 2570 (1997).Google Scholar
11. Hu, Y., Wu, H., Gonsalves, K.E., and Merhari, L., Microelectronic Engineering 2000 (submitted).Google Scholar
12. Hovington, P., Drouin, D., and Gauvin, R., Scanning 19, 1 (1997).Google Scholar