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High Resolution Electron Microscopy of ∑ =3 NiSi2 (111)(115) Si And NiSi2(221)/(001)Si Interfaces

Published online by Cambridge University Press:  15 February 2011

Wen-Jauh Chen
Affiliation:
Department of Mechanical Materials Engineering, National Yun-Lin Institute of Technology, Yun-Lin, Taiwan, R.O.C.
Fu-Rong Chen
Affiliation:
HRTEM LAB, Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, R.O.C.
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Abstract

High resolution imaging technique is applied to systematically study the ∑ =3 NiSi2(111)/(115)Si and NiSi2(221)/(001)Si interfaces. The long-period boundaries of ∑ =3 NiSi2 (111)/(115)Si and NiSi2(221)/(001)Si have been shown to decompose into short period of symmetrical NiSi2 (111)/(111)Si and NiSi2 (112)/(112)Si atomic facets which are similar to the case of asymmetrical twin boundaries in NiSi2 crystal. This result is consistent with the computer simulation in grain boundary case that asymmetrical tilt boundaries which are generally of longer periods may facet on an atomic scale into short period symmetrical boundaries.

The domain-related atomic faceting interfaces have been found in both of.∑ =3 NiSi2(111)/(115)Si and NiSi2(221)/(001)Si interfaces. The coexistence of two domain-related atomic faceting interfaces in the ∑ =3 NiSi2(111)/(115)Si has also been observed in different area of an interface which are separated by a 1/4<111> type of dislocation associated with a ‘demi-step’. The Burgers vector and step of a dislocation required to separate two domain structures in the ∑ =3 NiSi2/Si interface can be derived from the CCSL model.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

1. Bonnet, R. and Durand, F., Phil Mag., 32, 997 (1975)CrossRefGoogle Scholar
2. Chen, F.-R. and King, A. H., Phil. Mag., 57, 431 (1988)Google Scholar
3. Cherns, D., Anstis, G. R., Hutchison, J. L. and Spence, J. C. H., Philos. Mag. A46, 849 (1982)CrossRefGoogle Scholar
4. Cherns, D., Hetherington, C. D. I. and Humphrey, C. J., Philos. Mag. A 49 165 (1984)Google Scholar
5. White, A. E., Short, K. T., Dynes, R. C., Garno, J. P. and Gibson, I. M., Appl. Phys. Lett. 50, 95 (1987)Google Scholar
6. Jong, A. F. De and Bulle-Lieuwma, C. W. T., Phil. Mag. 62, 183 (1990)Google Scholar
7. Bulle-Lieuwma, C. W. T., Ommen, A. H. Van, Vandenhoudt, D. E. W., Ottenheim, I. J. M. and Jong, A. F. De, J. AppL. Phys. 70, 3093 (1991)Google Scholar
8. Bulle-Lieuwma, C. W. T., Jong, A. F. De and Vandenhoudt, D. E. W., Phil. MAg. 64, 255 (1991)CrossRefGoogle Scholar
9. Gibson, J. M., Bean, J. C., Poate, J. M. and Tung, R. T., Appl. Phys. Left., 41, 818 (1982)Google Scholar
10 Loretto, D., Gibson, J. M. and Yalisove, S. M., Phys. Rev. Lett., 63(3), 298 (1989)CrossRefGoogle Scholar
11. Catana, A., Heintze, M. and Schmid, P. E. and Stadelmann, P. Mat. Res. Soc. Symp. Proc., 159, 147 (1990)Google Scholar
12. Meneau, C. D'Anterroches. and Perret, P., Phil. Mag. 63, 1221 (1991)Google Scholar
13. Chen, W. J., Chen, F.-R. and Chen, L. I., Appl. Phys.lett, 60, 2201 (1992a)Google Scholar
14. Kilaas, R., Proceedings of 49th EMSA Meetimg, San Fransisco, CA USA, (1991) 528Google Scholar
15. Pond, R. C., PhiL Mag. A47, L49 (1983 a)CrossRefGoogle Scholar
16. Pond, R. C., Inst. Phys. Conf. ser. 67, 59 (1983 b)Google Scholar
17. Pond, R. C. and Cherns, D., Surf. Sci., 152/3, 1197 (1985)Google Scholar
18. Chen, W. J. and Chen, F.-R., accepted by Ultramicroscopy (1992)Google Scholar
19. Chen, W. J., Chen, F.-R. and Chen, L. J., accepted by Phil. Mag. (1992b)Google Scholar
20. Sutton, A. P. and Vitek, V., Phil. Trans. Roy. Soc. London, A309, 1,37,55 (1983)Google Scholar
21. Brokman, A., Bristowe, P. D. and Balluffi, R. W., Script Met., 15, 201 (1981)CrossRefGoogle Scholar
22. King, A. H. and Smith, D. A., Acta Crystallogr., A36, 335 (1980)Google Scholar
23. Balluffi, R. W., Brokman, A. and King, A. H., Phil. Mag., 30, 1453 (1982)Google Scholar
24. Möller, H.J., Phil. Mag., A43,1045 (1981)Google Scholar
25. Hamann, D. R., Phys. Rev. Lett., 60, 313 (1988)Google Scholar
26. Van Den Koek, P. J., Ravenek, W. and Baerends, E. I., Surf Sci., 205, 549 (1988)Google Scholar
27. Xu, Y., Zhang, K. and Xie, X., Phys. Rev. (b), 33, 8602 (1996)Google Scholar