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High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation

  • Andrzej Taube (a1) (a2), Maciej Kozubal (a1), Jakub Kaczmarski (a1), Marcin Juchniewicz (a1), Adam Barcz (a1) (a3), Jan Dyczewski (a3), Rafał Jakieła (a3), Elżbieta Dynowska (a1) (a3), Michał Adam Borysiewicz (a1), Paweł Prystawko (a4) (a5), Jakub Jasiński (a2), Paweł Borowicz (a1) (a6), Eliana Kamińska (a1) and Anna Piotrowska (a1)...

Abstract

The paper reports on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistor using Al double-implantation. The implantation was performed using Al+ ions with energies of 800 keV and 300 keV with doses of 1.5×1013 ion/cm2 and 1×1013 ion/cm2, respectively. Electrical measurements have shown that after implantation the sheet resistance was 1.8×1011 Ω/□ and increased to 1.17×1014 Ω/□ and 3.29×1012 Ω/□ after annealing at 400°C and 600°C respectively. Annealing at 800°C decreased the sheet resistance to 1.38×108 Ω/□. Characterization by XRD, Raman and photoluminescence spectroscopy give evidence that implantation damages the crystal lattice, yielding insulating properties. It has been demonstrated that the isolation is stable up to 600°C.

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