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High rate etching of GaAs and GaP by gas cluster ion beams

Published online by Cambridge University Press:  01 February 2011

Masahiro Nagano ,
Shingo Houzumi ,
Noriaki Toyoda ,
Susumu Yamada ,
Shirabe Akita  and
Isao Yamada
Masahiro Nagano
Affiliation:
Electrical Physics Department, Komae Research Laboratory, Central Research Institute of Electric Power Industry (CRIEPI), 2–11–1 Iwado Kita, Komaeshi, Tokyo 201–8511, Japan
Shingo Houzumi
Affiliation:
Laboratory of Advanced Science & Technology for Industry, Himeji Institute of Technology, 3–1–2 Kouto, Kamigori, Ako, Hyogo 678–1205, Japan
Noriaki Toyoda
Affiliation:
Laboratory of Advanced Science & Technology for Industry, Himeji Institute of Technology, 3–1–2 Kouto, Kamigori, Ako, Hyogo 678–1205, Japan
Susumu Yamada
Affiliation:
Electrical Physics Department, Komae Research Laboratory, Central Research Institute of Electric Power Industry (CRIEPI), 2–11–1 Iwado Kita, Komaeshi, Tokyo 201–8511, Japan
Shirabe Akita
Affiliation:
Electrical Physics Department, Komae Research Laboratory, Central Research Institute of Electric Power Industry (CRIEPI), 2–11–1 Iwado Kita, Komaeshi, Tokyo 201–8511, Japan
Isao Yamada
Affiliation:
Laboratory of Advanced Science & Technology for Industry, Himeji Institute of Technology, 3–1–2 Kouto, Kamigori, Ako, Hyogo 678–1205, Japan
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Abstract

Gas cluster ion beam (GCIB) techniques have recently been proposed as new processing methods. We have been investigating the characteristics of GCIB techniques through sputtering GaAs and GaP by Ar gas cluster ion beams as a function of cluster size and acceleration energy. The Ar cluster size was selected by a magnetic spectrometer, and was obtained from the mass spectra measured by a time of flight mass spectrometer. The average sputtering yields of GaAs and GaP were 0–47 and 0–66 atoms/ion for 5–30 k V, respectively. The sputtering yields of GaAs and GaP were higher than those of an Ar monomer ion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R9.38
Copyright
Copyright © Materials Research Society 2004

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References

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