Skip to main content Accessibility help
×
Home

High Rate Dry Etching of GaN, AIN and InN in ECR Cl2/CH4/H2/Ar Plasmas

  • C. B. Vartuli (a1), S. J. Pearton (a1), C. R. Abernathy (a1), R. J. Shul (a2), S. P. Kilcoyne (a2), M. Hagerott Crawford (a2), A. J. Howard (a2) and J. E. Parmeter (a2)...

Abstract

Etch rates for binary nitrides in ECR Cl2/CH4/H2/Ar are reported as a function of temperature, rf-bias, microwave power, pressure and relative gas proportions. GaN etch rates remain relatively constant from 30 to 125 °C and then increase to a maximum of 2340 Å-min−1 at 170 °C. The AIN etch rate decreases throughout the temperature range studied with a maximum of 960 Å-min−1 at 30 °C. When CH4 is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III–V nitrides remains unchanged over the temperatures studied. The GaN and InN rates increase significantly with rf power, and the fastest rates for all three binaries are obtained at 2 mTorr. Surface morphology is smooth for GaN over a wide range of conditions, whereas InN surfaces are more sensitive to plasma parameters.

Copyright

References

Hide All
1. Nakamura, S., Mukai, T., Senoh, M. and Iwasu, N., Jpn. J. Appl. Phys. 31 L139 (1992).
2. Matsuoka, T., Sasaki, T. and Latsui, A., Optoelectronic Devices and Technologies, 5 53 (1990).
3. Adesida, I., Mahajan, A., Andideh, E., Khan, M.A., Olson, D.T. and Kuzina, J.N., Appl. Phys. Lett. 63 2777 (1993).
4. Lin, M.E., Fan, Z.F., Allen, L.H. and Morkoc, H., Appl. Phys. Lett. 64 887 (1994).
5. Pearton, S.J., Abernathy, C.R. and Ren, F., Appl. Phys. Lett. 64 2294 (1994).
6. Shul, R.J., Lovejoy, M. L., Hetterington, D.L., Reiger, D.T., Klein, J.K. and Melloch, M.R., J. Vac. Sci. Technol. B13 27 (1995).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed