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High Rate Deposition of High Quality ZnO:Al by Filtered Cathodic Arc

Published online by Cambridge University Press:  16 August 2011

Rueben J. Mendelsberg
Affiliation:
Plasma Applications Group, Lawrence Berkeley National Laboratory Berkeley, CA 94720, U.S.A. Inorganic Nanostructures Facility of the Molecular Foundry, Lawrence Berkeley National Laboratory
Sunnie H.N. Lim
Affiliation:
Plasma Applications Group, Lawrence Berkeley National Laboratory Berkeley, CA 94720, U.S.A.
Delia J. Milliron
Affiliation:
Inorganic Nanostructures Facility of the Molecular Foundry, Lawrence Berkeley National Laboratory
André Anders
Affiliation:
Plasma Applications Group, Lawrence Berkeley National Laboratory Berkeley, CA 94720, U.S.A.
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Abstract

High quality ZnO:Al (AZO) thin films were prepared on glass substrates by direct current filtered cathodic arc deposition. Substrate temperature was varied from room temperature to 425°C, and samples were grown with and without the assistance of low power oxygen plasma (75W). For each growth condition, at least 3 samples were grown to give a statistical look at the effect of the growth environment on the film properties and to explore the reproducibility of the technique. Growth rate was in the 100-400 nm/min range but was apparently random and could not be easily traced to the growth conditions explored. For optimized growth conditions, 300-600 nm AZO films had resistivities of 3-6 x 10-4 Ωcm, carrier concentrations in the range of 2-4 x 1020 cm3, Hall mobility as high as 55 cm2/Vs, and optical transmittance greater than 90%. These films are also highly oriented with the c-axis perpendicular to the substrate and a surface roughness of 2-4 nm.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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