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High Quality Hydrogenated Amorphous Silicon Films with Significantly Improved Stability

Published online by Cambridge University Press:  10 February 2011

Shuran Sheng ,
Xianbo Liao ,
Zhixun Ma ,
Guozhen Yue ,
Yongqian Wang  and
Guanglin Kong
Shuran Sheng
Affiliation:
State Laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China
Xianbo Liao
Affiliation:
State Laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China
Zhixun Ma
Affiliation:
State Laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China
Guozhen Yue
Affiliation:
State Laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China
Yongqian Wang
Affiliation:
State Laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China
Guanglin Kong
Affiliation:
State Laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China
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Abstract

High quality hydrogenated amorphous silicon (a-Si:H) films have been prepared by a simple “uninterrupted growth/annealing” plasma enhanced chemical vapor deposition (PECVD) technique, combined with a subtle boron-compensated doping. These a-Si:H films possess a high photosensitivity over 106, and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. The central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the Fermi level close to the midgap. Our results show that the improved stability and photosensitivity of a-Si:H films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 969
Copyright
Copyright © Materials Research Society 1998

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References

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