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High Quality Erbium-Doped Bismuth Based Oxide Film for Planar Waveguide Amplifier Prepared by Sputtering

  • S. Suzuki (a1), Y. Kondo (a1), T. Nagashima (a1), N. Sugimoto (a1), J. Ebisawa (a1) and S. Ito (a1)...

Abstract

High quality Bi2O3 based Er-doped films for planar waveguide amplifier have been deposited by sputtering from sintered targets. It was found that both the amount of residual water and the Er concentration in films mainly affected a lifetime of the fluorescence at 1530nm. By optimizing these parameters, we have obtained films with a lifetime over 3msec, as the same as that of bulk glass prepared by the melting method.

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Sugimoto, N., Kuroiwa, Y., Ochiai, K., Ohara, S., Fukasawa, Y., Ito, S., Tanabe, S., Hanada, T., 11th Optical Amplifiers and their applications (OAA2000), OSA Technical Digest (Optical Society of America, Washington D.C. 2000), PDP3, pp13.
2. Kuroiwa, Y., Sugimoto, N., Ochiai, K., Ohara, S., Fukasawa, Y., Ito, S., Tanabe, S. and Hanada, T. OSA Technical Digest (Optical Society of America, Washington, D.C. 2001), TuI5, pp13.
3. Kondo, Y., Nagashima, T., Takenobu, S., Sugimoto, N., Ito, S., Tanabe, S., Hanada, T., Kintaka, K., Nishii, J., 11th OFC2002, OSA Technical Digest (2002), TuB4.
4. Tanabe, S., Sugimoto, N., Ito, S., Hanada, T., J. Lumin. 87–89 (2000) 670672
5. Sugimoto, N., J. Am. Ceram. Soc. 85 (2002) 1083–88.

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