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High Purity Titanium Silicide Films Formed by Sputter Deposition and Rapid Thermal Annealing

  • T. Brat (a1), J.C.S. Wei (a2), J. Poole (a1), D. Hodul (a3), N. Parikh (a4) and C. Wickersham (a1)...

Abstract

We have investigated the formation of titanium silicide films sputter deposited from a high purity (99.995%) composite TiSi2.2 target. The films, sputtered at a rate of 3.7 nm/sec, were deposited on Si(100), Si02 , and N+ Poly-Si substrates at temperatures ranging from room temperature to 425°C. Room temperature depositions produced amorphous films, while heated substrate depositions formed crystalline films with a metastable C49 TiSi2 structure. Rapid thermal processing of these films at temperatures higher than 700°C resulted in the formation of a stable C54 TiSi2 structure. Stoichiometry of the deposited films over a 10 cm diameter wafer was found to be independent of the substrate temperature. Stress in the films was measured as a function of deposition and annealing parameters. The amorphous films showed a tensile stress of about 0.1 GPa, while films deposited on substrates at 425°C had an order of magnitude higher tensile stress level.The resistivity measured on the 400°C deposited films was about half of that obtained with the films deposited at roomtemperature. A comparison between films deposited on a hot substrate and those which were rapid thermal processed is presented.

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High Purity Titanium Silicide Films Formed by Sputter Deposition and Rapid Thermal Annealing

  • T. Brat (a1), J.C.S. Wei (a2), J. Poole (a1), D. Hodul (a3), N. Parikh (a4) and C. Wickersham (a1)...

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