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High Purity Silicon Amido Precursors for Low Temperature Cvd of High к Gate Silicates

  • A.S. Borovik (a1), C. Xu (a1), B. C. Hendrix (a1), J. F. Roeder (a1) and T. H. Baum (a1)...

Abstract

High purity silicon amido precursors provide a route to low temperature CVD of silicate gate dielectrics. We have developed a straightforward synthetic method for the production of high purity Si[N(CH3)2]4, Si(NMeEt)4, HSi(NEtMe)3 and HSi(NEt2)3 in high yield. These compounds were fully characterized by NMR, GC/MS, ICP-MS, ICchlorine, and elemental analysis. Their solution compatibility with an Hf amide source was also examined by chemical techniques. Low temperature CVD of metal silicate films is also demonstrated.

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High Purity Silicon Amido Precursors for Low Temperature Cvd of High к Gate Silicates

  • A.S. Borovik (a1), C. Xu (a1), B. C. Hendrix (a1), J. F. Roeder (a1) and T. H. Baum (a1)...

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