- Cited by 27
Xie, K. Buchwald, W.R. Zhao, J.H. Flemish, J.R. Burke, T. Kingsley, L. Weiner, M. and Singh, H. 1994. Switching characteristics of a high-temperature 6H-SiC thyristor. p. 415.
Trew, R.J. and Shin, M.W. 1994. Wide bandgap semiconductor MESFETs for high temperature applications. p. 109.
Xie, K. Zhao, J.H. Flemish, J.R. Burke, T. Buchwald, W.R. Lorenzo, G. and Singh, H. 1996. A high-current and high-temperature 6H-SiC thyristor. IEEE Electron Device Letters, Vol. 17, Issue. 3, p. 142.
Flemish, J. R. Xie, K. and Mclane, G. F. 1996. Dry Etching of SiC for Advanced Device Applications. MRS Proceedings, Vol. 421, Issue. ,
Sheppard, S.T. Melloch, M.R. and Cooper, J.A. 1996. Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbide. IEEE Electron Device Letters, Vol. 17, Issue. 1, p. 4.
Konstantinov, A. O. Wahab, Q. Nordell, N. and Lindefelt, U. 1997. Ionization rates and critical fields in 4H silicon carbide. Applied Physics Letters, Vol. 71, Issue. 1, p. 90.
Bakowski, M. Gustafsson, U. and Lindefelt, U. 1997. Simulation of SiC High Power Devices. physica status solidi (a), Vol. 162, Issue. 1, p. 421.
Dillon, Rodney O. 1997. Synthesis and Properties of Advanced Materials. p. 1.
Wee, A.T.S Li, K and Tin, C.C 1998. Surface chemical states on LPCVD-grown 4H-SiC epilayers. Applied Surface Science, Vol. 126, Issue. 1-2, p. 34.
Planson, D Locatelli, M.L Lanois, F and Chante, J.P 1999. Design of a 600 V silicon carbide vertical power MOSFET. Materials Science and Engineering: B, Vol. 61-62, Issue. , p. 497.
Elford, A. and Mawby, P.A. 1999. The numerical modelling of silicon carbide high power semiconductor devices. Microelectronics Journal, Vol. 30, Issue. 6, p. 527.
Li, B. Cao, L. and Zhao, J.H. 1999. High current density 800-V 4H-SiC gate turn-off thyristors. IEEE Electron Device Letters, Vol. 20, Issue. 5, p. 219.
Hsing, Edward H.S and Gray, Jeffery L 1999. Numerical analysis of relationship between blocking and driving capability in 6H-SiC UMOSFET. Microelectronics Journal, Vol. 30, Issue. 1, p. 1.
Matsunami, H. 2000. Progress in wide bandgap semiconductor SiC for power devices. p. 3.
Jayant Baliga, B 2000. Electric Refractory Materials.
Lee, Y.S. Lee, W.O. Han, M.K. and Choi, Y.I. 2000. The analytic models for temperature dependence of the breakdown voltage of 6H- and 4H-SiC rectifiers. Vol. 3, Issue. , p. 1079.
Lee, Y. S. Han, M. K. and Choi, Y. I. 2000. The Temperature Dependent Breakdown Voltage For 4H- and 6H-SiC Diodes. MRS Proceedings, Vol. 622, Issue. ,
Pearton, S.J. and Lee, J.W. 2001. Handbook of Advanced Electronic and Photonic Materials and Devices. p. 191.
Nakamura, Shun-ichi Kumagai, Hironori Kimoto, Tsunenobu and Matsunami, Hiroyuki 2002. Anisotropy in breakdown field of 4H–SiC. Applied Physics Letters, Vol. 80, Issue. 18, p. 3355.
Nakazawa, S. Kimoto, T. Hashimoto, K. and Matsunami, H. 2002. High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition. Journal of Crystal Growth, Vol. 237-239, Issue. , p. 1213.
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The breakdown electric field of 4H-SiC as a function of doping was measured using pn junction rectifiers, with maximum voltages of 1130 V being achieved. 4H-SiC vertical power MOSFET structures have shown specific on-resistances of 33 mΩ-cm2 for devices capable of blocking 150 V. A current density of 100 A/cm2 was achieved at a drain voltage of 3.3 V. Thyristors fabricated in SiC have also shown blocking voltages of 160 V and 100 A/cm2 at 3.0 V. High temperature operation was measured, with the power MOSFETs operating to 300°C, and the thyristors operating to 500°C.
Submicron 6H- and 4H-SiC MESFETs have shown good I-V characteristics to Vd= 40 V, with an Idss of 200–300 mA/mm. The maximum operating frequencies (fmax) achieved for 6H-SiC MESFETs is 13.8 GHz, with small-signal power gains of 9.8 dB and 2.9 dB at 5 GHz and 10 GHz, respectively. 4H-SiC MESFETs have demonstrated an RF output power density of 2.8 W/mm at 1.8 GHz. This is the highest power density ever reported for SiC and is 2–3 times higher than reported for comparable GaAs devices.
Hide All1. Edmond, J.A., Waltz, D.G., Brueckner, S., Kong, H.S., Palmour, J.W., and Carter, C.H. Jr, Proc. First International High Temp. Electron. Conf., edited by King, D.B. and Thome, F.V. (Sandia National Labs, Albuquerque, NM, 1991) pp. 500–505.2. Slack, G.A., Phys, J.. Chem. Solids 34, 321 (1973).3. Bhatnagar, M. and Baliga, B.J., IEEE Trans, on Electron Devices 40, 645 (1993).4. Schaffer, W.J., Kong, H.S., Negley, G.H., and Palmour, J.W., to be published, Proc, of 1993 Intnl. Conf. SiC & Related Matls. edited by Spencer, M. & Harris, G., (Intnl. Proc. in Phys.).5. Schaffer, W.J., Negley, G.H., Irvine, K.G., and Palmour, J.W., Diamond. SiC. and Nitride Wide-Bandgap Semiconductors, edited by Carter, C.H. Jr, Gildenblatt, G., Nakamura, S., and Nemanich, R.J., (Mater. Res. Soc. Proc, this volume, Pittsburgh, PA, 1994).6. von Muench, W. and Pettenpaul, E., J. Appl. Phys. 48, 4823 (1977).7. Shin, M.W., Bilbro, G.L., and Trew, R.J., 1993 IEEE/Cornell Conference (IEEE).8. Palmour, J.W., Weitzel, C.E., Nordquist, K., and Carter, C.H., to be published. Proc, of 1993 Intnl. Conf. SiC & Related Matls, edited by Spencer, M. & Harris, G., (Intnl. Proc. in Phys.).9. Sriram, S., Clarke, R.C., Hanes, M.H., McMullin, P.G., Brandt, C.D., Smith, T.J., Burk, A.A. Jr, Hobgood, H.M., Barrett, D.L., and Hopkins, R.H., to be published, Proc, of 1993 Intnl. Conf. SiC & Related Matls, edited by Spencer, M. & Harris, G., (Intnl. Proc. in Phys.).10. Neudeck, P.G. and Powell, J.A., IEEE Electron Device Lett. 15, 63 (1994).11. Neudeck, P.G., Larkin, D.J., Powell, J.A., Matus, L.G., and Salupo, C.S., Appl. Phys. Lett. 64(11), 1386 (1994).12. Palmour, J.W., Edmond, J.A., Kong, H.S., and Carter, C.H. Jr, 1993 Proc. 28th Intersocietv Energy Conversion Conference. (Amer. Chem. Soc. 1993) pp. 1.249–1.254.13. Crofton, J., Barnes, P.A., Williams, J., and Edmond, J.A., Appl. Phys. Lett. 62, 384 (1993).14. Palmour, J.W., Edmond, J., Kong, H.S., and Carter, C.H. Jr, to be published, Proc, of 1993 Intnl. Conf. SiC & Related Matls, edited by Spencer, M. & Harris, G., (Intnl. Proc. in Phys.).
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