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High Power 330 nm AlInGaN UV LEDs in the High Injection Regime

  • M. Gherasimova (a1), J. Su (a1), G. Cui (a1), J. Han (a1), H. Peng (a2), E. Makarona (a2), Y. He (a2), Y.-K. Song (a2) and A. V. Nurmikko (a2)...

Abstract

We report on the growth and testing of the light emitting diode structures incorporating quaternary AlInGaN active region with an emission wavelength of 330 nm. Small area circular devices were fabricated, yielding the output power of 110 μW measured with a bare-chip configuration in a high current injection regime (8 kA/cm2 for a 20 μm diameter device). Structural properties of the constituent epitaxial layers were evaluated by atomic force microscopy and transmission electron microscopy, resulting in the observation of two-dimensional growth morphologies of AlN and AlGaN, and the estimate of threading dislocation densities in the low 109 cm-2 range in the structures grown on sapphire substrates.

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High Power 330 nm AlInGaN UV LEDs in the High Injection Regime

  • M. Gherasimova (a1), J. Su (a1), G. Cui (a1), J. Han (a1), H. Peng (a2), E. Makarona (a2), Y. He (a2), Y.-K. Song (a2) and A. V. Nurmikko (a2)...

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