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High Performance Hydrogenated Amorphous Silicon n-i-p Photo-diodes on Glass and Plastic Substrates by Low-temperature Fabrication Process

  • Kyung Ho Kim (a1), Yuriy Vygranenko (a2), Mark Bedzyk (a3), Jeff Hsin Chang (a4), Tsu Chiang Chuang (a5), Denis Striakhilev (a6), Arokia Nathan (a7), Gregory Heiler (a8) and Timothy Tredwell (a9)...


We report on the fabrication and characterization of hydrogenated amorphous silicon (a-Si:H) films and n-i-p photodiodes on glass and PEN plastic substrates using low-temperature (150°C) plasma-enhanced chemical vapor deposition. Process conditions were optimized for the i-a-Si:H material which had a band gap of ~1.73 eV and low density of states (of the order 1015 cm-3). Diodes with 0.5 μm i-layer demonstrate quantum efficiency ~70%. The reverse dark current of the diodes on glass and PEN plastic substrate is ~10-11 and below 10-10 A/cm2, respectively. We discuss the difference in electrical characteristics of n-i-p diodes on glass and PEN in terms of bulk- and interface-state generation currents.



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