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High Mobility Nanocrystalline Silicon TFTs for Display Application

  • Min-Koo Han (a1) and Sang-Myeon Han (a2)

Abstract

Nanocrystalline silicon (nc-Si) thin film transistors (TFTs) of which active layer thickness was 100nm were fabricated using inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150°C. The fabricated nc-Si TFT exhibits rather high field effect mobility exceeding 22cm2/Vs and excellent sub-threshold slope of 0.45V/dec. The nc-Si film deposited 150°C as an active layer of the TFT shows high crystallinity more than 70% and very thin incubation layer less than 20nm. ICP-CVD provides high density plasma with reduced ion bombardment during the deposition on nc-Si and He dilution can enhance the decomposition of SiH4 into Si, SiHX radicals and atomic H, so that high quality nc-Si film can be fabricated. The gate insulator SiO2 film deposited by ICP-CVD at 150°C shows good electrical characteristics such as flat band voltage of -1.8V and breakdown voltage of 6.2MV/cm.

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1 Smith, P. M., Carey, P. G., and Sigmon, T. W., Appl. Phys. Lett., Vol. 70, No 3, pp. 342344, 1997.
2 Han, Sang-Myeon, Lee, Min-Cheol, Shin, Moon-Young, Park, Joong-Hyun and Han, Min-Koo, Proc. IEEE, Vol. 93, No. 7, pp. 12971305, 2005.
3 Young, N. D., French, I. D., Trainor, M. J., Murley, D. T., McCulloch, D. J., Wilks, R. W., Int. Display Workshop (IDW) 99, Sendai, Japan, pp. 219222, 1999.
4 Stewart, R. G., Dresner, J., Weisbrod, S., Huq, R. I. and Plus, D., SID 95 Digest., pp. 8992, 1995.
5 Salleo, A. and Street, R. A., J. Appl. Phys., 94, pp. 471479, 2003.
6 Cabarrocas, P. Rocai, Brenot, R., Bulkin, P., Vanderhaghen, R., and Drevillon, B., J. Appl. Phys., Vol. 86, 12, pp. 70797081, 1999.
7 Goto, Masashi, Toyoda, Hirotaka, Kitagawa, Masatoshi, Hirao, Takashi and Sugai, Hideo, Jpn. J. Appl. Phys. Vol. 36, pp. 37143720, 1997.
8 Hopwood, J., Plasma Sources Sci. Technol. Vol. 1, pp. 109116, 1992.
9 Keller, J. H., Plasma Sources Sci. Technol. Vol. 5, pp. 166172, 1996.
10 Kondo, Michio, Fujiwara, Hiroyuki, Matsuda, Akihisa, Thin Solid Films, 430, pp. 130134, 2003.
11 Voutsasa, A. T., Hatalis, M. K. Boyce, J. and Chiang, A., J. Appl. Phys. 78 (12), pp. 69997005, 1995.
12 Kroll, U., Meier, J., and Shah, A., Mikhailov, S. and Weber, J., J. Appl. Phys. 80 (9), pp. 49714975, 1996.
13 Kondo, Michio, Fukawa, Makoto, Guo, Lihui, Matsuda, Akihisa, J, Non-Cryst. Solids 266-269, pp. 8489, 2000.
14 Vossen, John L., Kern, Werner, Thin Film Processes II, Academic Press, 1991.
15 Mukherjee, C., Anandan, C., Seth, T., Dixit, P. N., and Bhattacharyya, R., J. Vac. Sci. Technol., A 17(6), pp. 32023208, 1999.
16 Han, Sang-Myeon, Park, Joong-Hyun, Shin, Hee-Sun, Choi, Young-Hwan and Han, Min-Koo, Tech. Digest. of International Electron Devices Meeting (IEDM) 2005, pp. 125128, 2005.
17 Schroder, Dieter K., Semiconductor Material and Device Characterization, 2nd edition, John Wiley and Sons, pp. 337368, 1998.
18 Han, Sang-Myeon, Shin, Moon-Young, Lee, Min-Cheol, Park, Joong-Hyun and Han, Min-Koo, Electrochem. and Solid-State Letters, 9 (2), H5–H7, 2006.
19 Choi, W. K., Han, K. K., Choo, C. K., Chim, W. K. and Lu, Y. F., J. Appl. Phys. 83 (9), pp. 48104815, 1998.
20 Cheng, I-C. and Wagner, S., IEE Proc.-Circuits Devices Syst., Vol. 150, No. 4, pp 339344, 2003.

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