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High Mobility a-Si:H TFT Fabricated by Hot Wire Chemical Vapor Deposition

  • Chun-Yuan Hsueh (a1), Chieh-Hung Yang (a2) and Si-Chen Lee (a3)

Abstract

The hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) having a very high field-effect mobility of 1.76 cm2/V-s and a low threshold voltage of 2.43 V have been fabricated successfully using the hot wire chemical vapor deposition (HWCVD).

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