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High Indium Content Ingan Films and Quantum Wells.

  • W. Van Der Stricht (a1), K. Jacobs (a1), I. Moerman (a1), P. Demeester (a1), L. Considine (a2), E. J. Thrush (a2), J. A Crawley (a2) and P. Ruterana (a3)...

Abstract

InGaN films and InGaN/GaN quantum wells with high indium content have been grown by MOVPE and characterised to evaluate the growth process and the indium incorporation efficiency. The characterisation techniques include photoluminescence, DC X-ray and TEM. The closed spaced vertical rotating disk reactor configuration results in a very high Indium incorporation for InGaN material, compared to other configurations. InGaN layers with an indium composition up to 56 % have been deposited which still exhibit very good optical properties (intense PL emission). The influence of various growth conditions on the InGaN composition and quality have been investigated to optimize the layer quality. TEM diffraction patterns have shown that the ternary InGaN layer can be chemically ordered. The In and Ga atoms occupy respectively the two simple hexagonal sublattice sites related by the glide mirrors and helicoidal axes of the P6 3mc symmetry group of the wurtzite GaN.

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[1] Nakamura, S., Mukai, T. and Senoh, M., Appl. Phys. Lett. 64 (1994) 1687.
[2] Ferreira, L.G., Wei, S.H., and Zunger, A., Phys. Rev.B 40, 3197(1989)
[3] Bellon, P., Chevalier, J.P., Martin, G.P., Dupon-Nivet, E., Thiébaut, C., and André, J.P., Appl. Phys. Lett. 52, 567(1988).
[4] Ruterana, P., Nouet, G.. Van der Stricht, W., Moerman, L. and Considine, L., submitted to Appl. Phys. Lett., 1997.
[1] Ponce, F.A., Galloway, S.A., Cherns, D., Kerns, R.S., Proceedings ICNS-2 Tokushima 1997, M2–6, pp.2627.
[6] Chichibu, S., Azuhata, T., Sota, T. and Nakamura, S., Appl. Phys. Lett., Vol.70 (21), 1997, pp. 28222824.
[7] Sohmer, A., Off, J., Bolay, H., Harle, V., Syganow, V., Im, J., Wagner, V., Adler, F., Hangleider, A., Dornen, A., Scholz, F., Brunner, D., Ambacher, O. and Lakner, H., MRS Internet Journal of NSR, Volume 2, art. 14, 1997.
[8] Ramer, J.C. and Hersee, S.D., presented at LEOS topical meeting, 1997.
[1] Van der Stricht, W., Moerman, I., Demeester, P., Crawley, J. A., Thrush, E.J., Middleton, P.G., Trager-Cowan, C. and O'Donnell, K.P., The International Symposium on GaN and Related Materials, Proceedings MRS Fall Meeting 1995, 231.
[10] Thrush, E.J., Crawley, J. A., Van der Stricht, W., Moerman, I., May, L., Nicholls, E. and Vergani, G., Wide band gap semiconductor light emitters, Colloquium organized by Professional Group El 3 of the IEE in association with the Institute of Physics 1996 (London).
[11] Van der Stricht, W., Moerman, I., Demeester, P., Crawley, J. A. and Thrush, E.J., J. Cryst. Growth, 170 (1997), 344.
[12] Keller, S. Mishra, U.K. and DenBaars, S.P., presented at OMVPE VII, Dana-Point (1997).
[13] Keller, S., Keller, B.P., Kapolnek, D.. Mishra, U.K., DenBaars, S.P., Shmagin, I.K., kolbas, R.M. and Krishnankutty, S., J. Cryst. Growth, Vol 170. 1997, pp. 349352.
[14] Lu, H., Thothathiri, M., Wu, Z. and Bath, I., J. Electr. Mat., Vol.26(3), 1997, pp. 281.
[15] Singh, R., Doppalapudi, D. and Moustakas, T.D., Appl. Phys. Lett., Vol.70 (9), 1997, pp. 10891091.
[16] Ho, I. and Stringfellow, G.B., Appl. Phys. Lett., Vol 69. (18), 1996, pp. 27012703.
[17] Kawaguchi, Y., Shimizu, M., Hiramatsu, K. and Sawaki, N., Mat. Res. Soc. Symp. Proc., Vol. 449, 1997, pp. 8994.
[18] Romano, L.T., McClusky, M.D., Krusor, B.S., Bour, D.P. and Chua, C., proceedings ICNS'97, M2–9, pp.3233.
[19] Tran, C.A.,Karlicek, R. F., Schurman, M., Salagaj, T. and Thomson, A., Stall, R., presented at Leos Topical Meeting, 1997.
[20] Sato, H., Suguhara, T, Naoi, Y. and Sakai, S., Proceedings ICNS'97, M2–7, pp 2829.
[21] Keller, S., Keller, B.P.,Kapolnek, D., Abare, C., Masui, H., Coldren, L.A., Mishra, U.K. and DenBaars, S.P., Appl. Phys. Lett., Vol.68, pp. 31473149.

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