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High Gain, Low Threshold Current GaInAsP Based Vcsels for Operation at 1.24UM

Published online by Cambridge University Press:  11 February 2011

Zhuopeng Tan ,
Yixin Li  and
Aris Christou
Zhuopeng Tan
Affiliation:
Department of Materials Science and Engineering, University of Maryland, MD 20742
Yixin Li
Affiliation:
Department of Materials Science and Engineering, University of Maryland, MD 20742
Aris Christou
Affiliation:
Department of Materials Science and Engineering, University of Maryland, MD 20742
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Abstract

An electrically pumped 1.24um GaxIn1-xAsyP1-y Vertical Cavity Surface Emitting Laser (VCSEL) has been designed and simulated. Threshold gain of 153cm-1 and threshold current of 1.00mA was obtained. The external efficiency predicted is 0.31. Also the optimized design of VCSEL structure is presented in this article. GaInAsP and AlInAs constitute the Distributed Bragg Reflectors (DBRs) multilayer stack. Reflectivity of the top DBRs is 0.97 and reflectivity of the bottom DBRs is 0.9978 and is shown to provide a good resonant cavity and sufficient lasing intensity. Compared with other reported structures, the present VCSEL has a lower threshold current and higher threshold gain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.45
Copyright
Copyright © Materials Research Society 2003

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References

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