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High Gain, Low Noise InP Heut for Millimeter-Wave Application

  • C. Yuen (a1), Y. C. Pao (a1), N. Chiang (a1) and N. G. Bechtel (a1)

Abstract

Lattice matched InP HEMT has demonstrated superior gain and noise figure performance compared to the AlGaAs HEMT and PHEMT. The gain and noise figure advantages of the InP HEMT have been transferred to the excellent MMIC performance in the millimeter-wave region.

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References

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1. Smith, P.M. et al. , “Microwave InAlAs/InGaAs/InP HEMTs: Status and applications”, 2nd Int'l Conf. on InP and Related Materials, p.39, Apr. 1990.
2. Majidi-Ahy, R. et al. , “5-100 GHz InP CPW MMIC 7-section Distributed Amplifier”, IEEE Trans. Microwave Theory Tech., Vol. 38, NO. 12, p.2016, Dec. 1990.
3. Majidi-Ahy, R. et al. , “100 GHz High-Gain InP MMIC Cascode Amplifier”, GaAs IC Symp. digest, p.173, Oct., 1990.
4. Yuen, C. et al. , “5-60 GHz High-Gain Distributed Amplifier Utilizing InP Cascode HEMTs”, GaAs IC Symp. digest, p.319, Oct., 1991.
5. Pao, Y.C. et al. , “Characterization of Surface-Undoped Ino. 5 2AIO.4 8As/Ino. 5 3 Gao.4 7 As/InP High Electron Mobility Transistors”, IEEE Trans. on Electron Devices, Vol. 37, No.10, p.2165, Oct., 1990.

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