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High Fill Factor a-Si:H Sensor Arrays with Reduced Pixel Crosstalk

Published online by Cambridge University Press:  01 February 2011

Yuriy Vygranenko ,
A. Sazonov ,
D. Striakhilev ,
J. H. Chang ,
G. Heiler ,
J. Lai ,
T. Tredwell  and
A. Nathan
Yuriy Vygranenko
Affiliation:
yvygranenko@deetc.isel.ipl.pt, ISEL, DEETC, Rua Conselheiro Emidio Navarro, 1, Lisbon, 1950-062, Portugal
A. Sazonov
Affiliation:
asazonov@venus.uwaterloo.ca, University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L 3G1, Canada
D. Striakhilev
Affiliation:
denis.striakhilev@gmail.com, University of Waterloo, Electrical and Computer Engineering, Waterloo, N2L 3G1, Canada
J. H. Chang
Affiliation:
jeff.chang@carestreamhealth.com, Carestream Health, Rochester, NY, 14652-3487, United States
G. Heiler
Affiliation:
gregory.heiler@carestreamhealth.com, Carestream Health, Rochester, NY, 14652-3487, United States
J. Lai
Affiliation:
jackson.lai@carestreamhealth.com, Carestream Health, Rochester, NY, 14652-3487, United States
T. Tredwell
Affiliation:
timothy.tredwell@carestreamhealth.com, Carestream Health, Rochester, NY, 14652-3487, United States
A. Nathan
Affiliation:
anathan@ucl.ac.uk, UCL, London Centre for Nanotechnology, London, WC1H OAH, United Kingdom
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Abstract

In this paper, we report on low noise, high fill factor amorphous silicon (a-Si:H) image sensor structures for indirect radiography. Two types of the sensor arrays comprising n-i-p photodiodes and m-i-s photosensors have been fabricated. The device prototypes contain 100 × 100 pixels, with a pixel pitch of 139 μm. The active-matrix addressing is provided by low off-current TFTs. The sensors are vertically integrated onto the TFT-backplane, by implementing a 3-μm-thick low-k interlayer dielectric. This dielectric layer serves to reduce the data line capacitance and to planarize underlying topography. The detector was designed for reduced data-line resistance and parasitic coupling. Details of the device design and fabrication, along with sensor performance characteristics, are presented and discussed.

Keywords

thin filmdevicesoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A19-04
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Street, R.A. (Ed.), in Technology and Applications of Amorphous Silicon, Springer, Berlin, 2000 p. 147 Google Scholar
2. Nathan, A. Park, B. Sazonov, A. Tao, S. Chan, I. Servati, P. Karim, K. Charania, T. Striakhilev, D. Ma, Q. and Murthy, R. V. R. Microelectronics Journal 31, 883 (2000).Google Scholar
3. Chang, J. H. Vygranenko, Y. and Nathan, A. J. Vac. Sci. Technol. A, 22, 971 (2004).Google Scholar
4. Lai, J. Vygranenko, Y. Heiler, G. Safavian, N. Striakhilev, D. Nathan, A. Tredwell, T. Mater. Res. Soc. Symp. Proc. 989, A14.05 (2007).Google Scholar
5. Theil, J. A. Mater. Res. Soc. Symp. Proc. 762, A21.4.1 (2003).Google Scholar
6. Weisfield, R. L. et al. Proc. SPIE, 5368, 338 (2001).Google Scholar
7. Safavian, N. Vygranenko, Y. Chang, J. Kim, Kyung Ho, Lai, J. Striakhilev, D. Nathan, A. Heiler, G. Tredwell, T. and Fernandes, M. Mater. Res. Soc. Symp. Proc. 989, A12.06 (2007).Google Scholar