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High Energy Ion Beam Annealing in Implanted CdTe

Published online by Cambridge University Press:  26 February 2011

S. P. Withrow
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
A. Lusnikov
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
H. J. Jiménez-Gonz´lez-
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
G. Dresselhaus
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

The annealing effects of a high energy beam of Cu ions on implanted CdTe crystals are studied. Single crystals of CdTe have been implanted with Eu (energy 60 keV, fluence 1 × 1016 cm−2) at substrate temperatures of 25°C, and 400°C. Lattice damage introduced by the implantation process was measured by Rutherford backscattering. The samples were then implanted with high energy Cu ions (energy 3.5 MeV, fluence 0.5 × 1016 cm−2) at substrate temperatures of 25°C and 200°C. Channeling spectra from these samples indicate a reduction in the near-surface lattice damage as a result of the Cu implantation that can be unambiguously separated from the external heating of the substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

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