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High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

  • Samuel A. Alterovitz (a1), Carl H. Mueller (a2), Edward T. Croke (a3) and George E. Ponchak (a1)

Abstract

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony concentration was approximately 4×1019 cm−3. The electron mobility was over 1,200 and 13,000 cm2/V-sec at room temperature and 0.25 K, respectively. At these two temperatures, the electron carrier densities were 1.6 and 1.33×1012 cm−2, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (VDS) range, with VDS knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

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1. Larson, L.E., IEEE Trans. Electron Devices 50, 683699 (2003).
2. Gilbert, B.K., Degerstrom, M.J., Zabinski, P.J., Schaefer, T.M., Fokken, G.J., Randall, B.A., Schwab, D.J., Daniel, E.S., and Sommerfeldt, S.C., Proc. IEEE 89, 426443 (2001).
3. Lyons, G., IEEE Radiation Effects Data Workshop (Newport Beach, CA), 9699 (1998).
4. Moor, A.P., Rochelle, J.M., Britton, C.L., Moore, J.A., Emery, M.S., and Schultz, R.L., Proc. 44th Midwest Symposium on Circuits and Systems, 614617, vol. 2 (2001).
5. Burghartz, J.N., Edelstein, D.C., Jenkins, K.A., and Kwark, Y.H., IEEE Trans. Microwave Theory and Techniques 45, p. 19611968 (1997).
6. Johnson, R.A., de la Houssaye, P.R., Chang, C.E., Chen, P-F, Wood, M.E., Garcia, G.A., Lagnado, I., and Asbeck, P.M., IEEE Trans. Electron Devices 45, 10471054 (1998).
7. Vasudev, P. K., “Silicon-on-Sapphire Heteroepitaxy” in Epitaxial Silicon Technology, edited by Baliga, B. J., p. 265 (Academic, New York, 1986).
8. Koester, S. J., Hammond, R., Chu, J. O., Mooney, P. M., Ott, J. A., Perraud, L., Jenkins, K. A., Webster, C. S., Lagnado, I., and de la Houssaye, P. R., IEEE Electron. Dev. Lett. 22, 9294 (2001).
9. Colinge, J.P., Silicon-on-Insulator Technology: Materials to VLSI (Kluwer, Boston, 1998), p. 8.
10. Fischetti, M.V. and Laux, S.E., J. Appl. Phys., 80, p. 22342252 (1996).
11. Kay, L.E. and Tang, T.W., J. Appl. Phys., 70, p. 14831488 (1991).
12. Sze, S.M., Physics of Semiconductor Devices 2nd ed. (Wiley, New York, 1981), p. 29.
13. Mueller, C. H., Croke, E. T. and Alterovitz, S. A., Elect. Lett. 39 (18), p 13531354 (2003).

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

  • Samuel A. Alterovitz (a1), Carl H. Mueller (a2), Edward T. Croke (a3) and George E. Ponchak (a1)

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