Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-23T11:51:47.702Z Has data issue: false hasContentIssue false
  • English
  • Français

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

Published online by Cambridge University Press:  01 February 2011

Samuel A. Alterovitz ,
Carl H. Mueller ,
Edward T. Croke  and
George E. Ponchak
Samuel A. Alterovitz
Affiliation:
NASA Glenn Research Center, Cleveland, OH 44135, USA
Carl H. Mueller
Affiliation:
Analex Corporation, Cleveland, OH 44135, USA
Edward T. Croke
Affiliation:
HRL Laboratories LLC, Malibu, CA USA 90265
George E. Ponchak
Affiliation:
NASA Glenn Research Center, Cleveland, OH 44135, USA
Get access

Abstract

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony concentration was approximately 4×1019 cm−3. The electron mobility was over 1,200 and 13,000 cm2/V-sec at room temperature and 0.25 K, respectively. At these two temperatures, the electron carrier densities were 1.6 and 1.33×1012 cm−2, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (VDS) range, with VDS knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 783: Symposium B – Materials, Intergration, and Packaging Issues for High-Frequency Devices , 2003 , B6.5
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Larson, L.E., IEEE Trans. Electron Devices 50, 683–699 (2003).Google Scholar
2. Gilbert, B.K., Degerstrom, M.J., Zabinski, P.J., Schaefer, T.M., Fokken, G.J., Randall, B.A., Schwab, D.J., Daniel, E.S., and Sommerfeldt, S.C., Proc. IEEE 89, 426–443 (2001).Google Scholar
3. Lyons, G., IEEE Radiation Effects Data Workshop (Newport Beach, CA), 96–99 (1998).Google Scholar
4. Moor, A.P., Rochelle, J.M., Britton, C.L., Moore, J.A., Emery, M.S., and Schultz, R.L., Proc. 44th Midwest Symposium on Circuits and Systems, 614–617, vol. 2 (2001).Google Scholar
5. Burghartz, J.N., Edelstein, D.C., Jenkins, K.A., and Kwark, Y.H., IEEE Trans. Microwave Theory and Techniques 45, p. 1961–1968 (1997).Google Scholar
6. Johnson, R.A., de la Houssaye, P.R., Chang, C.E., Chen, P-F, Wood, M.E., Garcia, G.A., Lagnado, I., and Asbeck, P.M., IEEE Trans. Electron Devices 45, 1047–1054 (1998).Google Scholar
7. Vasudev, P. K., “Silicon-on-Sapphire Heteroepitaxy” in Epitaxial Silicon Technology, edited by Baliga, B. J., p. 265 (Academic, New York, 1986).Google Scholar
8. Koester, S. J., Hammond, R., Chu, J. O., Mooney, P. M., Ott, J. A., Perraud, L., Jenkins, K. A., Webster, C. S., Lagnado, I., and de la Houssaye, P. R., IEEE Electron. Dev. Lett. 22, 92–94 (2001).Google Scholar
9. Colinge, J.P., Silicon-on-Insulator Technology: Materials to VLSI (Kluwer, Boston, 1998), p. 8.Google Scholar
10. Fischetti, M.V. and Laux, S.E., J. Appl. Phys., 80, p. 2234–2252 (1996).Google Scholar
11. Kay, L.E. and Tang, T.W., J. Appl. Phys., 70, p. 1483–1488 (1991).Google Scholar
12. Sze, S.M., Physics of Semiconductor Devices 2nd ed. (Wiley, New York, 1981), p. 29.Google Scholar
13. Mueller, C. H., Croke, E. T. and Alterovitz, S. A., Elect. Lett. 39 (18), p 1353–1354 (2003).Google Scholar