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High Efficiency UV-Emission at 345 nm from InAlGaN Light-Emitting Diodes

  • A. Kinoshita (a1) (a2), H. Hirayama (a1), M. Ainoya (a1) (a2), T. Yamabi (a1) (a2), A. Hirata and Y. Aoyagi (a1)...

Abstract

Optical and electrical properties of 340 nm-band bright UV-light emitting diodes (LEDs) were compared between In0.03Al0.20Ga0.77N and other active regions. Single peaked and high efficiency ultraviolet (UV) emission at 345 nm from In0.03Al0.20Ga0.77N LEDs is achieved under continuous current injection conditions. Any significant broadening and peak shift of the electroluminescence (EL) spectrum were not observed. We attribute such a good properties to using of high quality InAlGaN-quaternary active layer. The EL intensity of the InAlGaN quaternary-based LED showed more one order of magnitude higher intensity than that of AlGaN and GaN based LEDs. Additionally, The I-L characteristics of the InAlGaN quaternary-based LED showed a linearly increasing of intensity with increasing of injection current density, that is also observed for InGaN based LEDs. This shows the recombination efficiency of the InAlGaN-based LED is as much as that of InGaN based LEDs. From these results InAlGaN quaternary is expected to be a promising material for UV LEDs and LDs.

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High Efficiency UV-Emission at 345 nm from InAlGaN Light-Emitting Diodes

  • A. Kinoshita (a1) (a2), H. Hirayama (a1), M. Ainoya (a1) (a2), T. Yamabi (a1) (a2), A. Hirata and Y. Aoyagi (a1)...

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