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High Efficiency Uv Emitter Using High Quality GaN/Al x Ga 1−x N Multi-Quantum Well Active Layer

  • M. Iwaya (a1), S. Terao (a1), T. Ukai (a1), R. Nakamura (a1), S. Kamiyama (a2), H. Amano (a3) (a2) and I. Akasaki (a3) (a2)...

Abstract

We investigated temperature dependence of the photoluminescence (PL) efficiency of GaN/Al0.08Ga0.92N multi-quantum wells (MQWs) with variations of Si-doping condition and threading dislocation density. Si-doping in the GaN/Al0.08Ga0.92N MQWs, especially in the barrier layer improves the PL efficiency. In addition, reduction of threading dislocation density also improves the PL intensity. The PL intensity of the GaN/Al0.08Ga0.92N MQW is drastically increased at least by a factor of 40, by a combination of the Si-doping and reduction of threading dislocation density. We fabricated a light emitting diode (LED) emitting at 357 nm using such a GaN/Al0.08Ga0.92N MQWs. Electro-luminescence intensity from the region with threading dislocation density of less than 108 cm−2 was much larger than that from the region with threading dislocation density of 6×109 cm−2.

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High Efficiency Uv Emitter Using High Quality GaN/Al x Ga 1−x N Multi-Quantum Well Active Layer

  • M. Iwaya (a1), S. Terao (a1), T. Ukai (a1), R. Nakamura (a1), S. Kamiyama (a2), H. Amano (a3) (a2) and I. Akasaki (a3) (a2)...

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