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High Efficiency Solar Cells with Intrinsic Microcrystalline Silicon Absorbers Deposited at High Rates by VHF-PECVD

Published online by Cambridge University Press:  01 February 2011

Yaohua Mai ,
Stefan Klein ,
Reinhard Carius ,
Xinhua Geng  and
Friedhelm Finger
Yaohua Mai
Affiliation:
IPV, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany Institute of Photoelectronics, Nankai University, Tianjin 300071, P. R. China.
Stefan Klein
Affiliation:
IPV, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Reinhard Carius
Affiliation:
IPV, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Xinhua Geng
Affiliation:
Institute of Photoelectronics, Nankai University, Tianjin 300071, P. R. China.
Friedhelm Finger
Affiliation:
IPV, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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Abstract

Intrinsic microcrystalline silicon (μc-Si:H ) was prepared at high deposition rates (RD) by very high frequency plasma-enhanced chemical vapor deposition (PECVD) working at high-pressure high-power (hphP). The material has similar electrical and optical properties as μc-Si:H material deposited at low rates by low-pressure low-power PECVD, apart from a more pronounced structure in-homogeneity along the growth axis for material deposited on glass substrates. With optimized deposition conditions high efficiency solar cells can be grown with deposition rates of up to 15 Å/s without deterioration of the performance as a function of RD. A high conversion efficiency of 9.8 % was obtained for a single junction μc-Si:H p-i-n solar cell at a deposition rate of RD = 11 Å/s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A23.2
Copyright
Copyright © Materials Research Society 2005

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