Hostname: page-component-77c89778f8-5wvtr Total loading time: 0 Render date: 2024-07-20T23:05:55.458Z Has data issue: false hasContentIssue false
  • English
  • Français

High Dose Implantation of Nitrogen and Phosphor into Silica Glass

Published online by Cambridge University Press:  25 February 2011

Takashi Tagami ,
Keiji Oyoshi  and
Shuhei Tanaka
Takashi Tagami
Affiliation:
Tsukuba Research Laboratory, Nippon Sheet Glass Co., Ltd., 5–4 Tokodai, Tsukuba City, Ibaraki, 300-26 Japan
Keiji Oyoshi
Affiliation:
Tsukuba Research Laboratory, Nippon Sheet Glass Co., Ltd., 5–4 Tokodai, Tsukuba City, Ibaraki, 300-26 Japan
Shuhei Tanaka
Affiliation:
Tsukuba Research Laboratory, Nippon Sheet Glass Co., Ltd., 5–4 Tokodai, Tsukuba City, Ibaraki, 300-26 Japan
Get access

Abstract

The surface chemistry of silica glass implanted with N+ or P+ ions has been studied. The X-ray photoelectron spectroscopy (XPS) spectra of N(1s) for silica glass implanted with N+ shows the possibility of the formation of oxynitride glass. For the first time, the effect of the implantation of N+ and additional Si+ on the surface chemistry of silica glass has been studied and found to be significant in increasing the nitrogen concentration in the silica glass. The peak concentration of N increases several times, and does not change even if the sample is annealed at 900°C. The XPS spectra of P(2p) for silica glass implanted with P+ ions shows two interactions, both P-O and P-P. Therefore, the XPS spectra shows the possibility for the formation of phosphosilicate glass using P+ implantation into silica glass.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 519
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Naik, I.K.,Appl.Phys.Lett.,43,519 (1983).CrossRefGoogle Scholar
[2] Wang, C.,Tao, Y. and Wang, S.,J.Non-Cryst.Solids,52,589 (1982).Google Scholar
[3] Mazzoldi, P.,Nucl.Instrum.and Methods,209/210,1089 (1983).Google Scholar
[4] Arnold, G.W.,Radiat.Eff.,65,257 (1982).Google Scholar
[5] Jech, C. and Bastl, Z.,Radiat.Eff.Lett.,76,25 (1983).Google Scholar
[6] Wang, C. and Tao, Y.,J.Non-Cryst.olids,71,397 (1985).Google Scholar
[7] Solnick-Legg, H. and Legg, K.O.,Met.Pro.,129,25 (1986).Google Scholar
[8] Balkand, P. and Eldridge, J.M.,Proc.IEEE,57,1558 (1969).Google Scholar