Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-25T19:08:37.577Z Has data issue: false hasContentIssue false
  • English
  • Français

High Doped p-Type GaN Grown by Alternative Co-Doping Technique

Published online by Cambridge University Press:  01 February 2011

Souhachi Iwai ,
Hideki Hirayama  and
Yoshinobu Aoyagi
Souhachi Iwai
Affiliation:
Semiconductors Lab., RIKEN (The Institute of Physical and Chemical Research), Hirosawa, Wako-shi, Saitama 351-0198, JAPAN
Hideki Hirayama
Affiliation:
Semiconductors Lab., RIKEN (The Institute of Physical and Chemical Research), Hirosawa, Wako-shi, Saitama 351-0198, JAPAN
Yoshinobu Aoyagi
Affiliation:
Semiconductors Lab., RIKEN (The Institute of Physical and Chemical Research), Hirosawa, Wako-shi, Saitama 351-0198, JAPAN
Get access

Abstract

We investigated the electrical properties of Mg-doped GaN grown by alternative pulse supplies of source and dopant materials in metalorganic vapor phase epitaxy. We obtained the hole concentration of 6×1018cm-3 for p-type GaN grown on a sapphire substrate by repetition of supply and purging of Ga and Mg sources in the constant NH3 flow, while that of p-type GaN grown by the constant feeding of Ga and Mg sources was 2×1018cm-3. By using alternative feedings of Ga source and NH3 with Mg-Si co-doping, we obtained a highly hole concentration of 2×1019cm-3 for p-type GaN which was grown directly on a low temperature AlN buffer layer. We also obtained the hole concentration of 6×1018cm-3 for p-type GaN which was grown on an AlGaN layer on a SiC substrate by alternative co-doping technique. The activation energies for Mg-doped GaN grown by the pulse feedings of source materials were lower than that for GaN grown by continuous supplies of source materials as used in the conventional technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F1.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yamamoto, T. and Katayama-Yoshida, H., Jpn. J. Appl. Phys. 36, L180 (1997).Google Scholar
2. Kim, K. S., Oh, C. S., Han, M. S., Kim, C. S., and Yang, G. M., Mater. Res. Soc. Symp. Proc. (1999).Google Scholar
3. Sakai, S., Saeki, H., Izumi, Y., and Wang, T., Proc. Int. Workshop on Nitride Semiconductors, JPAP Conf. Series I, 637 (2000).Google Scholar
4. Shimizu, S. and Sonoda, S., Proc. Int. Workshop on Nitride Semiconductors, JPAP Conf. Series I, 740 (2000).Google Scholar
5. Korotkov, R. Y., Gregie, J.M., and Wessels, B. W., Appl. Phys. Letters, 78, 222 (2001)Google Scholar
6. Adivarahan, V., Simin, G., Tamulatis, G., Srinvasan, R., Yang, J., Khan, M. Asif, Shur, M. S., and Gaska, R., Appl. Phys. Letters, 79, 1903 (2001)Google Scholar
7. Khan, M. Asif, Skogman, R. A., J. M. Van Hove, Olson, D. T., and Kuznia, J. N., Appl. Phys. Letters, 60, 1366 (1992)Google Scholar
8. Zhang, J. P., Adivarahan, V., Wang, H. M., Fareed, Q., Kuokstis, E., Chitnis, A., Shatalov, M., Yang, J. W., Simin, G., and Khan, M. Asif, Jpn. J. Appl. Phys. 40, L921 (2001).Google Scholar