P doped, intrinsic, and n doped microcrystalline silicon (μc-Si) thin films were successfully synthesized on 10×10 cm2 transparent conductive oxide (TCO) /glass substrate by using a Very High Frequency Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD, 80MHz) single chamber system. The crystal fraction of p and n type μc-Si:H with a thickness of 100nm was over 70% and 80%, respectively. Intrinsic μc-Si:H was deposited at a substrate temperature of 250°C with a high deposition rate over 1 nm/s. Photo-current/dark-current ratio of intrinsic μc-Si:H was higher than 102. The optimum cell initial efficiency of μc-Si:H single junction solar cell had been achieved 7.03 % so far.