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High Current Density in m c-Si PECVD Diodes for Low Temperature Applications

Published online by Cambridge University Press:  21 March 2011

Patricia A. Beck ,
Janice H. Nickel  and
Peter G. Hartwell
Patricia A. Beck
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA 94304, U.S.A.
Janice H. Nickel
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA 94304, U.S.A.
Peter G. Hartwell
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA 94304, U.S.A.
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Abstract

The development of microcrystalline diodes grown at low temperature by PECVD techniques is reported. Current densities near 200 A/cm2 at + 2 V, and rectification ratios on the order of 105 at +/- 1V and 107at +/- 2V were obtained. The reverse currents were in the nano-ampere range. Correlations between deposition conditions and film quality are presented. The effects of mesa formation and subsequent treatments designed to reduce process damage are discussed: annealing conditions yield an increase in forward current, and a decrease in reverse current. Fabrication conditions are compatible with applications requiring low temperature processes (e. g., multi-layer structures, molecular layers, or plastic substrates and coatings).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.30
Copyright
Copyright © Materials Research Society 2004

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References

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