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High Current Density Implantation and Ion Beam Annealing in Si*

  • O. W. Holland (a1) and J. Narayan (a1)

Abstract

Annealing of amorphous layers in Si by high flux, selfion irradiation will be discussed. The mechanism for the lattice recovery is presented and related to the structure of the residual damage. It will be shown that highly supersaturated, alloyed regions, free from extended defects, result from the annealing process.

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Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation

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6. Narayan, J. and Holland, O. W., Phys. Stat. Sol. (a) 73, 225 (1982).
7. Tamura, M., Yagi, K., Sakudo, N., Tokiguti, K., and Tokuyama, T., International Conference on Ion Beam Modification of Materials Budgapest 4–8 September 1978.
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10. Gabilli, E., Lotti, R., Merli, P. G., Nipoti, R., and Ostoja, P., Appl. Phys. Lett. 41, 967 (1982).
11. Narayan, J. and Holland, O. W. in Metastable Materials Formation by Ion Implantation, ed. by Picraux, S. T. and Choyke, W. J., North Holland, New York, 1982.

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