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HIGH CONTROLLABILITY OF CARRIER CONCENTRATION OF p--LPE InP BY Mn DOPING

  • T. TANAHASHI (a1), M. KONDO (a1), T. TAKANOHASHI (a1), Y. KOTAKI (a1), S. ISOZUMI (a1) and K. NAKAJIMA (a1)...

Abstract

Extremely high controllability of the carrier concentration of p--InP below 1×l0l6 cm−3 has been obtained by using Mn as a dopant. Applying Mndoped p--InP to the current confining layers of 1.3 µm buried heterostructure (BH) laser diodes has enabled threshold currents as low as 12 mA.

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