Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-23T23:27:59.466Z Has data issue: false hasContentIssue false
  • English
  • Français

High Channel Mobility a-Si:H Thin Film Transistors with Oxide/Nitride Dielectrics

Published online by Cambridge University Press:  22 February 2011

S. S. He ,
D. J. Stephens ,
G. Lucovsky  and
R. W. Hamaker
S. S. He
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh NC 27695–8202
D. J. Stephens
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh NC 27695–8202
R. W. Hamaker
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh NC 27695–8202
Get access

Abstract

We describe: i) nitride-layer optimization; ii) device fabrication: and iii) electrical properties of a-Si:H thin film transistors, TFTs, that integrate oxide/nitride dielectrics into an inverted, staggered gate structure. We have systematically changed the concentrations of Si-Si, Si-H and Si-NH bonding groups within the deposited nitride layers by varying the source gas flow ratio, R = NH3/SiH4 from 2.5 to 12.5. The electrical characteristics of the TFTs improve significantly as the gas phase ratio R is increased from 2.5 to approximately 10, and then decrease as R is further increased. The performance of the TFTs peaks for a source gas ratio of -10, where the channel mobility is ∼1.4 cm2/V-s, the threshold voltage is 2.3 V; and the Ion to Ioff current ratio is > 105.These increases in performance can only realized in devices in which the back of the Si channel region is passivated with an oxy-nitride interfacial region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 413
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Suzuki, K., “Flat panel displays using amorphous and microcrystalline semiconductor devices” in Amorphous and Microcrystalline Semiconductor Devices. Edited Kanicki, J., Boston: (Artech House, 1991), p. 77.Google Scholar
2. Howard, W.E., IBM Journal of Research and Development 36, 3 (1992).Google Scholar
3. Lustig, N. and Kaniki, J., J. Appl. Phys., 65, 3951 (1989).Google Scholar
4. Van Berkel, C., “Properties of the Nitride/a-Si:H Interface”, in Properties of Amorphous Silicon. (EMIS Datareviews Series No. 1, 1989), p.534.Google Scholar
5. Robertson, J., Philo. Mag. B 63, 47 (1991).Google Scholar
6. Hiranaka, K., Yoshimura, T., Yamaguchi, T., and Yanagisawa, S., J. Appl. Phys. 60, 4204 (1986).Google Scholar
7. Lin, S., Ph.D Thesis NCSU (1986).Google Scholar
8. Kanicki, J., Libsch, F.R., Griffith, J. and Polastre, R., J. Appl. Phys 69, 2339 (1991).Google Scholar
9. Parsons, G.N., Kusano, C., and Lucovsky, G., J. Vac. Sci. Tech., A5, 1665 (1987).Google Scholar
10. He, S.S., Stephens, D.J., Hamaker, R.W., and Lucovsky, G., MRS Symp. Proc, Fall 1992.Google Scholar
11. Lucovsky, G., Ma, Y., He, S.S., Yasuda, T., Stephens, D.J., and Habermehl, S., MRS Symp. Proc, Fall 1992.Google Scholar