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High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

Published online by Cambridge University Press:  10 February 2011

W. C. Lai ,
M. Yokoyama ,
C. Y. Chang ,
J. D. Guo ,
J. S. Tsang ,
S. H. Chan  and
S. M. Sze
W. C. Lai
Affiliation:
National Cheng Kong University, Department of Electrical Engineering, Tainan, Taiwan, R.O.C.
M. Yokoyama
Affiliation:
National Cheng Kong University, Department of Electrical Engineering, Tainan, Taiwan, R.O.C.
C. Y. Chang
Affiliation:
National Chiao Tung University, Institute of Electronic, Hsinchu 30050, Taiwan, R.O.C.
J. D. Guo
Affiliation:
National Nano Device Laboratories, Hsinchu 30050, Taiwan, R. 0. C.
J. S. Tsang
Affiliation:
National Nano Device Laboratories, Hsinchu 30050, Taiwan, R. 0. C.
S. H. Chan
Affiliation:
National Nano Device Laboratories, Hsinchu 30050, Taiwan, R. 0. C.
S. M. Sze
Affiliation:
National Cheng Kong University, Department of Electrical Engineering, Tainan, Taiwan, R.O.C.
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Abstract

Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 523
Copyright
Copyright © Materials Research Society 1999

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References

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