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HgCdTe/CdTe Multiple Quantum Wells: Growth, Stability, and Optical Properties

  • R.D. Feldman (a1), R.F. Austin (a1), C.L. Cesar, M.N. Islam (a1), C.E. Soccolich (a1), Y. Kim (a1) and A. Ourmazd (a1)...

Abstract

We have grown HgCdTe/CdTe multiple quantum wells by molecular beam epitaxy which show room temperature photoluminescence and sharp absorption steps at mid-infrared wavelengths. Quantitative chemical mapping, performed by transmission electron microscopy, indicates minimal interdiffusion during growth. Annealing experiments performed at higher temperatures show that the interdiffusion coefficient is a strong function of the depth of the interface below the surface. Absorption spectra have been accurately modeled with a square well/envelope function approach. The films have been used to passively mode lock color center lasers and produce pulses as short as 120 fsec near 2.7 μm.

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HgCdTe/CdTe Multiple Quantum Wells: Growth, Stability, and Optical Properties

  • R.D. Feldman (a1), R.F. Austin (a1), C.L. Cesar, M.N. Islam (a1), C.E. Soccolich (a1), Y. Kim (a1) and A. Ourmazd (a1)...

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