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Heteropolytype Growth of Beta Silicon Carbide on Alpha Silicon Carbide by Low Pressure Chemical Vapor Deposition at 1150 C

Published online by Cambridge University Press:  25 February 2011

K. J. Irvine ,
M. G. Spencer  and
V. A. Dmitriev
K. J. Irvine
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, DC
M. G. Spencer
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, DC
V. A. Dmitriev
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, DC
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Abstract

We report on the low temperature growth of heteropolytype junctions of 3C-SiC on 6H-SiC by low pressure chemical vapor deposition. In this work we have observed the epitaxial layers to be single crystal below a critical thickness limit which depends on growth temperature. Films thicker than this limit are polycrystalline. At 1150 C we have found the critical thickness to be approximately 2500 angstroms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 793
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Powell, J.A., Petit, J.B., Edgar, J.H., Jenkins, I.G., Matus, L.G., Yang, J.W., Pirouz, P., Choyke, W.J., Clemen, L., Yoganathan, M., Appl. Phys. Lett. 59 (3), 333 (1991).Google Scholar
2. Irvine, K.G., Jenkins, I., Givens, W., Spencer, M.G., and Aluko, M., Mat. Sci and Engr, BII, 93 (1992).Google Scholar
3. Dmitriev, V.A., Ivanov, A. P., Korkin, I.V., Morozenko, Ya. V., Sidorova, T.A., Chelnokov, Strel'chuk V.E.: Sov. Tech. Phys. Lett., v. 11, N2, pp. 98 (1985)Google Scholar
4. Blagenina, S.V., Dmitriev, V.A., Ivanova, N.G., Popov, I.V., and Semenova, G.N., Proceedings of the Workshop on Power Semiconductor Devices, 1985, (Valgus, Tallinn, 1984), p. 182 [in Russian].Google Scholar