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Heteropolytype Growth of Beta Silicon Carbide on Alpha Silicon Carbide by Low Pressure Chemical Vapor Deposition at 1150 C

  • K. J. Irvine (a1), M. G. Spencer (a1) and V. A. Dmitriev (a1)


We report on the low temperature growth of heteropolytype junctions of 3C-SiC on 6H-SiC by low pressure chemical vapor deposition. In this work we have observed the epitaxial layers to be single crystal below a critical thickness limit which depends on growth temperature. Films thicker than this limit are polycrystalline. At 1150 C we have found the critical thickness to be approximately 2500 angstroms.



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1. Powell, J.A., Petit, J.B., Edgar, J.H., Jenkins, I.G., Matus, L.G., Yang, J.W., Pirouz, P., Choyke, W.J., Clemen, L., Yoganathan, M., Appl. Phys. Lett. 59 (3), 333 (1991).
2. Irvine, K.G., Jenkins, I., Givens, W., Spencer, M.G., and Aluko, M., Mat. Sci and Engr, BII, 93 (1992).
3. Dmitriev, V.A., Ivanov, A. P., Korkin, I.V., Morozenko, Ya. V., Sidorova, T.A., Chelnokov, Strel'chuk V.E.: Sov. Tech. Phys. Lett., v. 11, N2, pp. 98 (1985)
4. Blagenina, S.V., Dmitriev, V.A., Ivanova, N.G., Popov, I.V., and Semenova, G.N., Proceedings of the Workshop on Power Semiconductor Devices, 1985, (Valgus, Tallinn, 1984), p. 182 [in Russian].


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