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Heteroepitaxy of Si/Si1−xGex Grown by Remote Plasma-Enhanced Chemical Vapor Deposition

  • T. Hsu (a1), R. Qian (a1), D. Kinosky (a1), J. Irby (a1), B. Anthony (a1), S. Banerjee (a1), A. Tasch (a1) and C. Magee (a2)...

Abstract

Low temperature heteroepitaxial growth of Si1−xGex films with mole fractions “x” ranging from 0.07 to 0.72 on Si(100) has been achieved by Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) at substrate temperatures of 305°C and 450°C. Reflection High Energy Electron Diffraction (RHEED), Transmission Electron Microscopy (TEM), and Secondary Ion Mass Spectroscopy (SIMS) were employed to characterize the crystallinity, composition and interfacial sharpness. The Si1−xGex films with thickness below the critical layer thickness were confirmed to have excellent crystallinity with defect density below the sensitivity of TEM analysis (105 cm−2). The Ge profile, from SIMS analysis, in a Si/Si0.8Ge0.2/Si/Si0.82Ge0.18 multilayer structure was found to have a transition width of 30Å/decade, which is the resolution limit of SIMS analysis. There is no Ge segregation observed at the Si/Si1−xGex interface. A superlattice structure with 24 pairs of Si(60Å)/Si0.8Ge0.2 (60Å) layers has been successfully grown by RPCVD at 450°C. From cross-sectional TEM analysis, very low defect densities and abrupt Ge transitions were confirmed.

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