Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-23T23:01:25.803Z Has data issue: false hasContentIssue false
  • English
  • Français

Heteroepitaxy of Inp on Si for Optical Devices

Published online by Cambridge University Press:  28 February 2011

Hidefumi Mori ,
Mitsuru Sugo ,
Masami Tachikawa ,
Yoshio Itch  and
Masafumi Yamaguchi
Hidefumi Mori
Affiliation:
NTT Opto-electronics Laboratories, 3-1 Morinosato Atsugi, Kanagawa 243-01
Mitsuru Sugo
Affiliation:
NTT Opto-electronics Laboratories, 3-1 Morinosato Atsugi, Kanagawa 243-01
Masami Tachikawa
Affiliation:
NTT Opto-electronics Laboratories, 3-1 Morinosato Atsugi, Kanagawa 243-01
Yoshio Itch
Affiliation:
NTT Opto-electronics Laboratories, 3-1 Morinosato Atsugi, Kanagawa 243-01
Masafumi Yamaguchi
Affiliation:
Tokai, Ibaraki-ken 319-11, Japan
Get access

Abstract

In situ measurements of dislocations at growth temperature have been made on the heteroepitaxial systems of GaAs/Si and GaP/Si. It was found that the etch pit densities of heteroepitaxial layers were as low as those of bulk wafers at the growth temperature and increase to 107 cm−2 when the layers cool down to room temperature. This means that the thermal stress determines the quality of heteroepitaxial layers.

The InP on Si system, in which the thermal expansion coefficient difference is smaller than other heteroepitaxial systems, has been studied. High quality InP has been obtained using a GaAs buffer layer, strained-layer superlattice insertion, and thermal cycle annealing and regrowth. Full width at half maximum of X-ray rocking curve was 110" at 13 µ thickness.

An InGaAsP laser diode emitting at 1.55 µm was successfully made on Si. The threshold current was 46 mA at room temperature for a ridge waveguide laser with a 4 µm width and a 200,µm cavity length.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 119
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yamakoshi, S., Abe, M., Wada, O., Komiya, S., and Sakurai, T., IEEE J.Quantum Electron.,QE-17, 167(1981)Google Scholar
2. Razeghi, M., Defour, M., Blondeau, R., Omnes, F., Maurel, P., and Acher, O., Appl. Phys. Lett.,53,2389(1988)10.1063/1.100239Google Scholar
3. Weber, E.R., ICCG-9, 24(1989)Google Scholar
4. Yonenaga, I. and Sumino, K., Inst.Phys.Conf.Ser. 104, 399(1989); 8th record of Alloy Semicond. Phys. and Elec.Symp.187(1989)Google Scholar
5. Tachikawa, M. and Mori, H., to be published in Appl. Phys. Lett. May (1990)Google Scholar
6. Mori, H., Ogasawara, M., Yamamoto, M.,and Tachikawa, M., Appl. Phys. Lett., 51,1245(1987)Google Scholar
7. Akiyama, M., Kawarada, Y., and Kaminishi, K., J. Crystal Growth 68,21(1984)10.1016/0022-0248(84)90391-9Google Scholar
8. Angilello, J., Potemski, R.M., and Woolhouse, G.R., J. Appl. Phys. 46,2315(1975)10.1063/1.321833Google Scholar
9.Ge/Si: Zhou, G.L., Chen, K.M., Jiang, W.D., Sheng, C., Zhang, X.J., and Wang, Xun, Appl.Phys.Lett.,53, 2180(1988) GaAs/InP:K.Katoh(private communication). GaAs/Ge: A.T.Macrander, R.D.Dupuis, J.C.Bean and J.M.Brown in Semiconductor-based Heterostructures edited by M.L.Green, J.E.E.Baglin, H.W.Deckman, W.Maya, and D.Narasinham (Proc. of Northwest Regional Meeting of Metallurgical Soc.'87),pp75-85 InP/GaAs: H.Horikawa, Y.Ogawa, K.Kawai, and M.Sakuta, Appl. Phys. Lett. 53,397(1988)10.1103/PhysRevLett.60.2180Google Scholar
l0.Sugo, M. and Yamaguchi, M., ICCG-9 28(1989)Google Scholar
11. Sugo, M., Uchida, N., Yamamoto, A., Nishioka, T., and Yamaguchi, M., J. Appl. Phys. 65,591(1989)Google Scholar
12. Sugo, M. and Yamaguchi, M., Appl.Phys.Lett. 54,1754(1989)Google Scholar
13. Yamaguchi, M., Sugo, M., and Itoh, Y., Appl.Phys.Lett. 54,2568(1989)Google Scholar