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Heteroepitaxial growth of ZnO films on Gd3Ga5O12 garnet substrates

  • Yosuke Ono (a1), Hiroaki Matsui (a1) (a2) and Hitoshi Tabata (a1) (a2)

Abstract

This study focused on structural and optical properties of ZnO films grown epitaxially on Gd3Ga5O12 substrates. ZnO films (a = 3.2439 Å and c = 5.2036 Å) were deposited on the (001) and (111) planes of Gd3Ga5O12 (GGG: a = 12.383 Å) garnet substrates by a pulsed laser deposition method. From out-of-plane and in-plane X-ray diffraction measurements, the obtained ZnO films showed a single phase with the (0001) orientation on the GGG (001) and (111) substrates. The epitaxial relations between the ZnO film and GGG (001) substrate were [10-10] ZnO ‖ [100] GGG and [10-10] ZnO ‖ [010] GGG, while the epitaxial relations between the ZnO film and GGG (111) substrate were [10-10] ZnO ‖ [11-2] GGG ±21°. Furthermore, transmittance electron microscopy revealed sharp interfaces between ZnO films and GGG substrates. From photoluminescent spectra, the ZnO films showed donor bound emissions superimposed with free excitons at a low temperature of 10 K.

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Heteroepitaxial growth of ZnO films on Gd3Ga5O12 garnet substrates

  • Yosuke Ono (a1), Hiroaki Matsui (a1) (a2) and Hitoshi Tabata (a1) (a2)

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