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Heteroepitaxial Growth of GexSi1−x Strained Layer on Si by RRH/VLP—CVD

  • Zheng Youdou (a1), Zhang Rong (a1), Hu Liqun (a1), Gu Shulin (a1), Wang Ronghua (a1), Han Ping (a1) and Jiang Ruolian (a1)...

Abstract

A rapid radiant heating, very low pressure CVD (RRH/VLP—CVD) has been successfully applied to GexSi1−x strained layer epitaxy on Si using SiH4' GeH4' B2H6 and PH3 as reaction gases at low temperature ranging from 550 to 650ĉ for operation pressure around mTorr. High quality GexSi1−x/Si strained layer heterostructure and superlattice were fabricated and high electrically active in—situ boron doping in GexSi1−x epilayer was also successfully achieved.

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[1] Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahka, S. and Robinson, I.K., J. Vac. Sci. Technol., A2, 436 (1984)
[2] Youdou, Zheng, Rong, Zhang, Ruolian, Jiang, Liqun, Hu, Peixin, Zhong, Shuiyuan, Mo, Shidong, Yu, Qi, Li and Duan, Feng, Proceedings of 20th International Conference on the Physics of Semiconductors, Thessaloniki, Greece, 1990, Vol.2, 869 (1990)
[3] Youdou, Zheng, Rong, Zhang, Liqun, Hu, Shulin, Gu, Ruolian, Jiang, Peixin, Zhong, Linhong, Qin, Hongtao, Shi, Shidong, Yu, Qi, Li and Duan, Feng, 5th International Conference on Modulation Semiconductor Structures. (Nara, Japan, 1991)
[4] Kern, W., Semicond. Int., p194, April (1984)

Heteroepitaxial Growth of GexSi1−x Strained Layer on Si by RRH/VLP—CVD

  • Zheng Youdou (a1), Zhang Rong (a1), Hu Liqun (a1), Gu Shulin (a1), Wang Ronghua (a1), Han Ping (a1) and Jiang Ruolian (a1)...

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