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Heteroepitaxial bonding of Si for hybrid photonic devices

  • Eric Le Bourhis (a1), Anne Talneau (a2), Isabelle Sagnes (a2), Gilles Patriarche (a2), Ludovic Largeau (a2) and David Troadec (a3)...

Abstract

New fabrication routes for hybrid photonic devices are explored. We report on silicon bonding to III-V semi-conducteurs e.g. Si/InP for emission/amplification function. The materials have been bonded to silicon since it can be nanostructured to obtain optical guides. The bonded surfaces are of the order of ∼ 1 cm2. Special attention has been paid to the surface preparation. The obtained structure has been characterized employing XRD while the mechanical response and interface strength have been investigated employing instrumented nanoindentation.

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Keywords

Heteroepitaxial bonding of Si for hybrid photonic devices

  • Eric Le Bourhis (a1), Anne Talneau (a2), Isabelle Sagnes (a2), Gilles Patriarche (a2), Ludovic Largeau (a2) and David Troadec (a3)...

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