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Heteroep1Taxial Nucleation and Structural Properties of MBE GaAs on Recessed Si: Etching Implications.

Published online by Cambridge University Press:  28 February 2011

Jo De Boeck ,
Jiben Liang ,
Jan Vanhellemont ,
Kristin Deneffe ,
Chris Van Hoof ,
Douglas J. Arent ,
Gustaaf Borghs  and
Jürgen Christen
Jo De Boeck
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven; Belgium
Jiben Liang
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven; Belgium
Jan Vanhellemont
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven; Belgium
Kristin Deneffe
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven; Belgium
Chris Van Hoof
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven; Belgium
Douglas J. Arent
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven; Belgium
Gustaaf Borghs
Affiliation:
Interuniversity Micro Electronics Center (IMEC vzw.), 75 Kapeldreef, B-3030 Leuven; Belgium
Jürgen Christen
Affiliation:
Technische Universitlit Berlin, 36 HardenbergstraBe, D-1000 Berlin 12; Federal Republic of, Germany
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Abstract

GaAs is grown embedded in pre-etched wells in the Si substrate. HNO3:HF, KOH:H2O and a dry etch technique are used as alternatives to form the wells. Cross-sectional SEM views of AlGaAs/GaAs heterostructures reveal the growth front and facet formation for the different sidewall geometries. Transmission electron microscopy is used to study epilayer degradation in relation to the substrate damage and the presence of edge induced defects in the GaAs. Cathodoluminescence reveals the uniformity of strain present in the GaAs layer embedded in the wet etched well. The impact of the different etching techniques on device integration is briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 311
Copyright
Copyright © Materials Research Society 1989

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References

1.see e.g. Matyi, R.J., Shichijo, H., Tsai, H.L., J. Vac. Sci. Technol. B 6(2), 699 (1988); J.W. Adkisson, T.I. Kamins, S.M. Koch, J.S. Harris, S.J. Rosner, G.A. Reid, and K. Nauka, ibid, B 6(2), 717 (1988); and Ref 9.Google Scholar
2. Vanhellemont, J., Bender, H., and Rousou, L., in MRS symposia proceedings No. 115, edited by Bravman, J.C. (Materials Research Society, Pittsburgh, PA, 1988).Google Scholar
3. Bimberg, D., Mijnzel, H., Steckenbom, A., Christen, J., Phys. Rev. B 31, 7788 (1985), J. Christen, D. Bimberg, Oyo Buturi 57, 69, Japan 1988, and J. Christen, M. Grundmann and D. Bimberg, Proc. 2nd Intern. Conf. on Formation of Semicon. Interfaces, Takarazuka, Japan 1988, to be published in Appl. Surface Science.Google Scholar
4. Smith, J.S., Derry, P.L., Margalit, S., and Yariv, A., Appl. Phys. Lett. 47, 712 (1985)CrossRefGoogle Scholar
5. Sangster, R.C., Compound Semiconductors, (Reinhold, New York, 1962), Vol.1, pp. 241–253.Google Scholar
6. Lee, J.W. and Tsai, H.L., J. Vac. Sci. Technol. B 5(3), 819 (1987).Google Scholar
7. Meier, H.P., Broom, R.F., Epperlein, P.W., Gieson, E. van, Harder, Ch., Jackel, H., Walter, W., Webb, D.J., J. Vac. Sci. Technol. B 6(2), 692 (1988).Google Scholar
8. Liang, J.B., Boeck, J. De, Deneffe, K., Arent, D.J., Hoof, C. Van, Vanhellemont, J., and Borghs, G., J. Vac. Sci. Technol. B jan/feb (1989).Google Scholar
9. Boeck, J. De, Liang, J.B., Deneffe, K., Vanhellemont, J., Arent, D.J., Hoof, C. Van, Mertens, R., and Borghs, G., Appl.Phys.Lett. 53, 1071 (1988).Google Scholar
10. Eaglesham, D.J., Aindow, M., and Pond, R.C. in Heteroepitaxv on Si: Fundamentals, structure and devices., edited by Choi, H.K., Hull, R., Ishiwara, H., and Nemanich, R.J. (Mat. Res. Soc. Proc. 116, Pittsburgh, PA,1988), pp. 267–272.Google Scholar
11. Vanhellemont, J., Boeck, J. De, Borghs, G., Mertens, R., presented at the 6th Oxford Conf. on the microscopy of semiconducting materials, Oxford, England (1989).Google Scholar
12. Vanhellemont, J., Amelinckx, S., Claeys, C., J. Appl. Phys. 61 (6), 2170 (1987).Google Scholar
13. Boeck, J. De, Deneffe, K., Christen, J., Borghs, G., to be published in Appl. Phys. Lett. (1989).Google Scholar
14. Yallup, K.J., PhD Thesis, Catholic University Leuven, 1988.Google Scholar
15. Matyi, R.J., Shichijo, H., Kim, T.S., and Tsai, H.L., in Heteroepitaxy on Si: Fundamentals. structure and devices, edited by Choi, H.K., Hull, R., Ishiwara, H., and Nemanich, R.J. (Mat. Res. Soc. Proc. 116, Pittsburgh, PA, 1988) pp. 99–110.Google Scholar
16. Shichijo, H., Matyi, R.J., and Taddiken, A.H., IEEE Electron Device Lett., EDL–9, 444 (1988).Google Scholar