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Helium and Hydrogen Induced Growth of Microcavities in Silicon; Application to Gas And Impurity Collection

Published online by Cambridge University Press:  16 February 2011

A. Van Veen ,
H. Schut ,
R.A. Hakvoort ,
A. Fedorov  and
K.T. Westerduin
A. Van Veen
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL 2629JB Delft, The, Netherlands
H. Schut
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL 2629JB Delft, The, Netherlands
R.A. Hakvoort
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL 2629JB Delft, The, Netherlands
A. Fedorov
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL 2629JB Delft, The, Netherlands
K.T. Westerduin
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL 2629JB Delft, The, Netherlands
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Abstract

Thermal helium desorption spectrometry and positron beam analysis have been used to monitor the growth of helium vacancy clusters during room temperature helium irradiation of silicon and during subsequent annealing to 1300 K. Experimental results obtained with hydrogen irradiation show that also hydrogen can be used to create cavities. There is a rather sharp threshold dose for creating cavities that will survive 1300 K annealing. It appears that positrons form a sensitive probe for the trapping and release of impurities inside the cavities. Results of atomistic calculations are used to discuss thermal stability of helium vacancy complexes. The results are related to recent impurity gettering studies based on impurity trapping at helium induced gettering centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 499
Copyright
Copyright © Materials Research Society 1995

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References

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