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  • K. KOBAYASHI (a1), N. KAMATA (a1) and T. SUZUKI (a1)


Heavily Si-doped aluminium arsenide films on GaAs substrate by MBE have been investigated. It is found that the Si activation energy ED for AlAs films decreases with increasing Si donor concentration, approaching a few meV for n≧3×l018. The maximum free electron concentration of n=7×l018 cm−3 and electron mobility of 200 cm2/V.sec for n=5×l017 were obtained. It is also shown that the replacement of the ternary AlxGal−xAs with a superlattice having heavily Si-doped binary AlAs in the barrier layers is effective to increase free carrier concentration.



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