Skip to main content Accessibility help
×
Home

Heavily Carbon Doped P-Type GaAs/InGaAs Strained-Layer Superlattices Grown by Mombe

  • Ming Qi (a1), Jinsheng Luo (a1), J. Shirakashi (a2), E. Tokumitsu (a2), S. Nozaki (a2), M. Konagai (a2) and K. Takahashi (a2)...

Abstract

Heavily carbon doped ρ-type GaAs/In0.3Ga0.7 As strained-layer superlattices (SLSs) with hole concentrations as high as 1 × 1020 / cm3 were successfully grown for the first time by metalorganic molecular beam epitaxy (MOMBE) using trimethylgallium (TMG), solid arsenic and solid indium. The single quantum well (SQW) and multiple quantum well (MQW) structures with different well width from 2 to 16nm were also designed to analyse the strain relaxation. The experimental results show that the SLS structures made of heavily carbon doped ρ—type GaAs and InGaAs have both of high hole concentration and small effective bandgap, which are satisfied for the application in heterojunction bipolar transistors (HBTs) as base layer.

Copyright

References

Hide All
1. Weyers, M., Putz, N., Heinecke, H., Heyen, M., Luth, H., and Balk, P., J. Electron. Mater. 15, 57 (1986).
2. Kobayashi, N., Makimoto, T., and Horikoshi, Y., Appl. Phys. Lett. 50, 1435 (1987).
3. Malik, R.J., Nottenberg, R.N., Schubert, E.F., Walker, J.F., and Ryan, R. W., Appl. Phys. Lett. 53, 2661 (1988).
4. Kuech, T.F., Tischler, M.A., Wang, P.J., Scilla, G., Potemski, R., and Cardone, F., Appl. Phys. Lett. 53, 1317 (1988).
5. Chiu, T.H., Cunningham, J.E., Ditzenberger, J.A., and Jan, W.Y., Appl. Phys. Lett. 53, 171 (1990).
6. Saito, K., Tokumitsu, E., Akatsuka, T., Miyauchi, M., Yamada, T., Konagai, M., and Takahashi, K., J. Appl. Phys. 64, 3975 (1988).
7. Yamada, T., Tokumitsu, E., Saito, K., Akatsuka, T., Miyauchi, M., Konagai, M., and Takahashi, K., J. Cryst. Growth 95, 145 (1989).
8. Abernathy, C.R., Pearton, S.J., Caruso, R., Ren, F., and Kovalchik, J., Appl. Phys. Lett. 55, 1750 (1989).
9. Konagai, M., Yamada, T., Akatsuka, T., Nozaki, S., Miyake, R., Saito, K., Fukamachi, T., Tokumitsu, E., and Takahashi, K., J. Cryst. Growth 105, 359 (1990).
10. Konagai, M., Yamada, T., Akatsuka, T., Saito, K., Tokumitsu, E., and Takahashi, K., J. Cryst. Growth 98, 167 (1989).
11. Benchimol, J.L., Alexandre, F., Gao, Y., and Alaoui, F., J. Cryst. Growth 95, 150 (1989).
12. Kamp, M., Contini, R., Werner, K., Heinecke, H., Weyers, M., Luth, H., and Balk, P., J. Cryst. Growth 95, 154 (1989).
13. Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S., Fullowan, T.R., Katz, A., Jordan, A.S., and Kovalchick, J., Cryst, J.. Growth 105, 375 (1990).
14. Ito, H. and Ishibashi, T., Jpn. J. Appl. Phys. 30, L944 (1991).
15. Shirakashi, J., Yamada, T., Qi, M., Nozaki, S., Takahashi, K., Tokumitsu, E., and Konagai, M., Jpn. J. Appl. Phys. 30, L1609 (1991).
16. Speriosu, V.S. and Vreeland, T. Jr, J. Appl. Phys. 65, 1591 (1984).
17. Cerdeira, F., Pinczuk, A., Bean, J.C., Batlogg, B., and Wilson, B. A., Appl. Phys. Lett. 45, 1138 (1984).
18. Qi, M. and Luo, J. S., Research and Progress of Solid State Electronics (in Chinese) 12, 132 (1992).
19. Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth 27, 118 (1974).
20. Ji, G., Huang, D., Reddy, U.K., Henderson, T.S., Houdre, R., and Morkoc, H., J. Appl. Phys. 62, 3366 (1987).

Heavily Carbon Doped P-Type GaAs/InGaAs Strained-Layer Superlattices Grown by Mombe

  • Ming Qi (a1), Jinsheng Luo (a1), J. Shirakashi (a2), E. Tokumitsu (a2), S. Nozaki (a2), M. Konagai (a2) and K. Takahashi (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed