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Heat and mass transfer simulation of SiC boule growth by sublimation

  • Michel Pons (a1), Cecile Moulin (a2), Jean-Marc Dedulle (a1), Alexandre Pisch (a1), Bernard Pelissier (a1), Elisabeth Blanquet (a1), Michail Anikin (a1), Etienne Pernot (a1), Roland Madar (a1), Claude Bernard (a1), Christian Faure (a2), Thierry Billon (a2) and Guy Feuillet (a2)...

Abstract

An accurate modelling and simulation of the sublimation growth process needs a software taking into account a multitude of highly coupled phenomena: fluid mechanics, convective, conductive and radiative heat transfer, electromagnetic, multicomponent species transport, homogeneous and heterogeneous reactivity and finally thermal and transport databases. The objective of this paper is to combine modelling trends with experimental results to propose explanations and solutions to growth problems. Finally, a simple and generic mechanical approach will show the relations between the density of dislocations and the temperature field.

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Heat and mass transfer simulation of SiC boule growth by sublimation

  • Michel Pons (a1), Cecile Moulin (a2), Jean-Marc Dedulle (a1), Alexandre Pisch (a1), Bernard Pelissier (a1), Elisabeth Blanquet (a1), Michail Anikin (a1), Etienne Pernot (a1), Roland Madar (a1), Claude Bernard (a1), Christian Faure (a2), Thierry Billon (a2) and Guy Feuillet (a2)...

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