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He Implanted Channel Waveguides of New Design for Efficient Blue Laser Light Generation

Published online by Cambridge University Press:  03 September 2012

L. Beckers ,
St. Bauer ,
Ch. Buchal ,
D. Fluck ,
T. Pliska  and
P. Günter
L. Beckers
Affiliation:
Institute for Ion Technology, Forschungszentrum Jülich GmbH (KFA), D-52425 Jilich, Germany
St. Bauer
Affiliation:
Institute for Ion Technology, Forschungszentrum Jülich GmbH (KFA), D-52425 Jilich, Germany
Ch. Buchal
Affiliation:
Institute for Ion Technology, Forschungszentrum Jülich GmbH (KFA), D-52425 Jilich, Germany
D. Fluck
Affiliation:
Institute for Quantum Electronics, ETH-Hönggerberg, CH-8093 Zflrich, Switzerland
T. Pliska
Affiliation:
Institute for Quantum Electronics, ETH-Hönggerberg, CH-8093 Zflrich, Switzerland
P. Günter
Affiliation:
Institute for Quantum Electronics, ETH-Hönggerberg, CH-8093 Zflrich, Switzerland
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Abstract

We present a new mask design and implantation scheme, which uses one single ion implantation step of 2 MeV He ions at a dose of 7–1014 to 3–1015 He/cm2 to form channel waveguides in single crystalline KNbO3. The special processing of the photoresist mask enables the formation of channel waveguides with a trapezoidal-shaped cross section, providing for the first time simultaneous confinement of both TE and TM modes in a permanent KNbO3 channel waveguide. 2.6 mW second-harmonic blue light at 441 nm was generated in a 5.8 mm long guide for a fundamental power of approx. 200 mW.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 483
Copyright
Copyright © Materials Research Society 1997

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References

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