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Guiding Principle to Develop Intrinsic Microcrystalline Silicon Absorber Layer For Solar Cell By Hot-Wire Cvd

Published online by Cambridge University Press:  17 March 2011

A. R. Middya ,
U. Weber ,
C. Mukherjee  and
B. Schroeder
A. R. Middya
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244-1130
U. Weber
Affiliation:
Department of Physics and Center of Materials Research, University of Kaiserslautern, P.O. Box 3049, D-67653 Kaiserslautren, Germany
C. Mukherjee
Affiliation:
Department of Physics and Center of Materials Research, University of Kaiserslautern, P.O. Box 3049, D-67653 Kaiserslautren, Germany
B. Schroeder
Affiliation:
Department of Physics and Center of Materials Research, University of Kaiserslautern, P.O. Box 3049, D-67653 Kaiserslautren, Germany
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Abstract

We report on ways to develop device quality microcrystalline silicon (μc-Si:H) intrinsic layer with high growth rate by hot-wire chemical vapor deposition (HWCVD). With combine approach of controlling impurities and moderate H-dilution [H2/SiH4 ͌ 2.5], we developed, for the first time, highly photosensitive (103 μc-Si:Hfilms with high growth rate (>1 nm/s); the microstructure of the film is found to be close to amorphous phase (fc ͌ 46 ̻± 5%). The photosensitivity systematically decreases with fc and saturates to 10 for fc> 70%. On application of these materials in non-optimized pin [.proportional]c-Si:H solar cell structure yields 700 mV open-circuit voltage however, surprisingly low fill factor and short circuit current. The importance of reduction of oxygen impurities [O], adequate passivation of grain boundary (GB) as well as presence of inactive GB of (220) orientation to achieve efficient [.proportional]c-Si:H solar cells are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A25.6
Copyright
Copyright © Materials Research Society 2001

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References

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