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Growth temperature - phase stability relation in In1-xGaxN epilayers grown by high-pressure CVD

  • Goksel Durkaya (a1), Mustafa Alevli (a2), Max Buegler (a3), Ramazan Atalay (a4), Sampath Gamage (a5), Martin Kaiser (a6), Ronny Kirste (a7), Axel Hoffmann (a8), Muhammad Jamil (a9), Ian Ferguson (a10) and Nikolaus Dietz (a11)...

Abstract

The influence of the growth temperature on the phase stability and composition of single-phase In1-xGaxN epilayers has been studied. The In1-xGaxN epilayers were grown by high-pressure Chemical Vapor Deposition with nominally composition of x = 0.6 at a reactor pressure of 15 bar at various growth temperatures. The layers were analyzed by x-ray diffraction, optical transmission spectroscopy, atomic force microscopy, and Raman spectroscopy. The results showed that a growth temperature of 925°C led to the best single phase InGaN layers with the smoothest surface and smallest grain areas

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Keywords

Growth temperature - phase stability relation in In1-xGaxN epilayers grown by high-pressure CVD

  • Goksel Durkaya (a1), Mustafa Alevli (a2), Max Buegler (a3), Ramazan Atalay (a4), Sampath Gamage (a5), Martin Kaiser (a6), Ronny Kirste (a7), Axel Hoffmann (a8), Muhammad Jamil (a9), Ian Ferguson (a10) and Nikolaus Dietz (a11)...

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